Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Nicolas Ginot"'
Autor:
Corentin Darbas, Jean-Christophe Olivier, Nicolas Ginot, Frédéric Poitiers, Christophe Batard
Publikováno v:
Energies, Vol 14, Iss 12, p 3589 (2021)
Recent Modular Multilevel Converter (MMC) topology allows for drastic improvements in power electronic conversion such as higher energy quality, lower power semiconductors electrical stress, decreased Electro-Magnetic Interferences (EMI), and reduced
Externí odkaz:
https://doaj.org/article/f4948e6993a047bca5f45fdc437447d0
Publikováno v:
Energies, Vol 14, Iss 13, p 3866 (2021)
Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as
Externí odkaz:
https://doaj.org/article/21d37c51641044669b4122429d146926
Autor:
Loreine Makki, Antoine Laspeyres, Corentin Darbas, Anne-Sophie Descamps, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot
Publikováno v:
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, 2022, 37 (9), pp.10585-10593. ⟨10.1109/TPEL.2022.3160278⟩
IEEE Transactions on Power Electronics, 2022, 37 (9), pp.10585-10593. ⟨10.1109/TPEL.2022.3160278⟩
International audience; Wide band gap (WBG) semiconductor materials offer faster and more reliable power electronic components in electric energy conversion systems. However, their faster switching speed and abilities to operate at higher frequency t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::937b4673b08ff8d2dc157b17c737be55
https://hal.science/hal-03601397
https://hal.science/hal-03601397
Publikováno v:
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2020, 35 (8), pp.8540-8549. ⟨10.1109/TPEL.2019.2960632⟩
IEEE Transactions on Power Electronics, 2020, 35 (8), pp.8540-8549. ⟨10.1109/TPEL.2019.2960632⟩
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2020, 35 (8), pp.8540-8549. ⟨10.1109/TPEL.2019.2960632⟩
IEEE Transactions on Power Electronics, 2020, 35 (8), pp.8540-8549. ⟨10.1109/TPEL.2019.2960632⟩
In power circuits, the gate drivers are required to provide an optimal and safe switching of power semiconductor devices. Nowadays, the gate driver boards include more and more features, such as short-circuit detection, soft-shutdown, temperature sen
Publikováno v:
13th IEEE Energy Conversion Congress and Exposition (IEEE ECCE)
13th IEEE Energy Conversion Congress and Exposition (IEEE ECCE), Oct 2021, Vancouver, Canada. ⟨10.1109/ECCE47101.2021.9595679⟩
13th IEEE Energy Conversion Congress and Exposition (IEEE ECCE), Oct 2021, Vancouver, Canada. ⟨10.1109/ECCE47101.2021.9595679⟩
International audience; That work investigates the compatibility of voltage balancing algorithm and multilevel modulations of a three phase modular multilevel converter (MMC). A study of the "Reduced switching frequency" (RSF) voltage balancing algor
Monitoring of gate leakage current on SiC power MOSFETs: an estimation method for smart gate drivers
Publikováno v:
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (8), pp.8752-8760. ⟨10.1109/TPEL.2021.3056648⟩
IEEE Transactions on Power Electronics, 2021, 36 (8), pp.8752-8760. ⟨10.1109/TPEL.2021.3056648⟩
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (8), pp.8752-8760. ⟨10.1109/TPEL.2021.3056648⟩
IEEE Transactions on Power Electronics, 2021, 36 (8), pp.8752-8760. ⟨10.1109/TPEL.2021.3056648⟩
International audience; Silicon Carbide (SiC) power transistors are more and more used in electric energy conversion systems. SiC power semiconductors devices, such as SiC metal-oxide-semiconductor field-effect transistor (MOSFET) can operate at high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12200375df44b98ffeaef40c1caf2a29
https://hal.archives-ouvertes.fr/hal-03154976
https://hal.archives-ouvertes.fr/hal-03154976
Autor:
Batard, Corentin Darbas, Jean-Christophe Olivier, Nicolas Ginot, Frédéric Poitiers, Christophe
Publikováno v:
Energies; Volume 14; Issue 12; Pages: 3589
Recent Modular Multilevel Converter (MMC) topology allows for drastic improvements in power electronic conversion such as higher energy quality, lower power semiconductors electrical stress, decreased Electro-Magnetic Interferences (EMI), and reduced
Publikováno v:
International Conference on Electrical Engineering and Electronics (EEE’20)
International Conference on Electrical Engineering and Electronics (EEE’20), Aug 2020, Prague (virtually), Czech Republic
International Conference on Electrical Engineering and Electronics (EEE’20), Aug 2020, Prague (virtually), Czech Republic
International audience; The development of electric transport technologies is virtuous in many ways: electric motors have far better yields than combustion motors and contribute to decrease urban local pollution. However they present drawbacks in ter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bc2ed749909e3b00c5d9968821a24b6
https://hal.science/hal-02732977
https://hal.science/hal-02732977
Publikováno v:
IEEE International Symposium on Industrial Electronics
IEEE International Symposium on Industrial Electronics, Jun 2020, Delft (virtually), Netherlands
ISIE
IEEE International Symposium on Industrial Electronics, Jun 2020, Delft (virtually), Netherlands
ISIE
International audience; In recent years, the number of work on smart gridshas increased, in particular work on the issue of electric vehicles(EVs) charging, which will be a critical aspect of this in thecoming years. The scientific research now offer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6f70648447ba4093a043a303c1ba50d
https://hal.science/hal-02570413
https://hal.science/hal-02570413
Publikováno v:
IET Power Electronics
IET Power Electronics, 2020, 13 (7), pp.ID PAPER PEL-2019-0422. ⟨10.1049/iet-pel.2019.0422⟩
IET Power Electronics, The Institution of Engineering and Technology, 2020, 13 (7), pp.ID PAPER PEL-2019-0422. ⟨10.1049/iet-pel.2019.0422⟩
IET Power Electronics, 2020, 13 (7), pp.ID PAPER PEL-2019-0422. ⟨10.1049/iet-pel.2019.0422⟩
IET Power Electronics, The Institution of Engineering and Technology, 2020, 13 (7), pp.ID PAPER PEL-2019-0422. ⟨10.1049/iet-pel.2019.0422⟩
Nowadays new silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are available in the market and they are expected to replace, in the next few years, the insulated gate bipolar transistor (IGBT) and Si-MOSFET in power e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97be84fcf2b2eea7df7a38dce51eadf7
https://hal.science/hal-02437157
https://hal.science/hal-02437157