Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Nicolas Degrenne"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ( $$\Delta T_{j}$$ Δ T j )
Externí odkaz:
https://doaj.org/article/5321eb1bf0a3412dbb3da87d8718420b
Publikováno v:
AIMS Electronics and Electrical Engineering, Vol 4, Iss 2, Pp 154-168 (2020)
Wire-bonded multi-chip IGBT power modules constitute the heart of high-current power electronic motor drives. The most common failure mechanism is the degradation of the top-side wires. This deterioration impacts the electrical path and the individua
Externí odkaz:
https://doaj.org/article/96e90415c14a4a3689f2aa009188bc46
Publikováno v:
Energies, Vol 16, Iss 5, p 2192 (2023)
Based on the consideration of various environmental problems caused by human activities, energy transition solutions are starting to emerge. Power electronics will be central to these transitions. The level of knowledge linking power electronics and
Externí odkaz:
https://doaj.org/article/c2af5f1242a5425e872263fa4f24bdc3
Autor:
Louis Schuler, Ludovic Chamoin, Zoubir Khatir, Mounira Berkani, Merouane Ouhab, Nicolas Degrenne
Publikováno v:
Computational Mechanics. 70:407-424
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84164d36f24fe01e309ea7d02d355ad7
https://doi.org/10.1007/s00466-022-02173-y
https://doi.org/10.1007/s00466-022-02173-y
Autor:
Louis Schuler, Ludovic Chamoin, Zoubir Khatir, Mounira Berkani, Merouane Ouhab, Nicolas Degrenne
Publikováno v:
Journal of Electronic Packaging. 144
A reduced weakly-coupled thermo-mechanical model based on the proper generalized decomposition method was developed for the numerical analysis of power modules. The employed model reduction method enabled us to obtain, in a preliminary offline phase,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a547325e79b05ad8d5d7a5e7df4dada
https://doi.org/10.1115/1.4053767
https://doi.org/10.1115/1.4053767
Publikováno v:
Scientific Reports
Scientific Reports, Nature Publishing Group, 2021, 11, pp.5601. ⟨10.1038/s41598-021-84976-2⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports, Nature Publishing Group, 2021, 11, pp.5601. ⟨10.1038/s41598-021-84976-2⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b237a884aaa97cf1c0a40c1cf809b44
https://pubmed.ncbi.nlm.nih.gov/33692407
https://pubmed.ncbi.nlm.nih.gov/33692407
Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
Multi-chip power switches consist of several dies in parallel. The temperature of these dies is not equal and evolves during ageing, in part as a consequence of wire-bond degradation. The temperature distribution may impact the condition monitoring a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccc45fa567b7b18bf1e8b6f6e8452d22
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215944
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215944
Autor:
Nicolas Degrenne, Zoubir Khatir, Stefan Mollov, Damien Ingrosso, Ali Ibrahim, Nausicaa Dornic
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2020, 114, 7p. ⟨10.1016/j.microrel.2020.113873⟩
Microelectronics Reliability, Elsevier, 2020, 114, pp.113873. ⟨10.1016/j.microrel.2020.113873⟩
Microelectronics Reliability, Elsevier, 2020, 114, 7p. ⟨10.1016/j.microrel.2020.113873⟩
Microelectronics Reliability, Elsevier, 2020, 114, pp.113873. ⟨10.1016/j.microrel.2020.113873⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ATHENES, GRECE, -; This paper focuses on the degradation at the wire bond contact with the metalized pad, and precisely its evolution with the power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18caf42364a94183b01b667d936c39de
https://hal.archives-ouvertes.fr/hal-03147217
https://hal.archives-ouvertes.fr/hal-03147217
Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2020, 114, ⟨10.1016/j.microrel.2020.113824⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2020, Athènes, France. ⟨10.1016/j.microrel.2020.113824⟩
Microelectronics Reliability, Elsevier, 2020, 114, ⟨10.1016/j.microrel.2020.113824⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2020, Athènes, France. ⟨10.1016/j.microrel.2020.113824⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Athènes, GRECE, 05-/10/2020 - 07/10/2020; Power electronic modules undergo electro-thermal stresses due to power losses that lead to several kinds
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abd523c196b197d6c398fff17f933a01
https://hal.archives-ouvertes.fr/hal-03150944/document
https://hal.archives-ouvertes.fr/hal-03150944/document
Autor:
Stefan Mollov, Richard Lallemand, Zoubir Khatir, D. Ingrosso, Jean-Pierre Ousten, Nicolas Degrenne, Ali Ibrahim
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2020, 114, 7p. ⟨10.1016/j.microrel.2020.113757⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2020, Athènes, Greece. ⟨10.1016/j.microrel.2020.113757⟩
Microelectronics Reliability, Elsevier, 2020, 114, 7p. ⟨10.1016/j.microrel.2020.113757⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2020, Athènes, Greece. ⟨10.1016/j.microrel.2020.113757⟩
ESREF 2020, 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Athènes, GRECE, 05-/10/2020 - 07/10/2020; This paper investigates the use of wire?bonds contact resistance as indicator to diagnose the health stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89838b29e2fe84eb89fd1abe7d0f3a05
https://hal.archives-ouvertes.fr/hal-03150061
https://hal.archives-ouvertes.fr/hal-03150061