Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Nicolas Cluet"'
Autor:
Lionel Thevenon, Jean Damien Chapon, Marianne Decaux, Mark Joyner, Avi Cohen, Nicolas Cluet, Fabrice Baron, Bertrand Borot, Frank Sundermann, Erez Graitzer, K. Dabertrand, Bertrand Le Gratiet, Yoann Blancquaert, Raphael Bingert, Pascal Gourard, Alain Ostrovsky, Laurene Babaud, Benedicte Bry, C. Monget, Ute Buttgereit, Jean Massin, Robert Birkner, Thierry Devoivre, Nicolas Thivolle
Publikováno v:
SPIE Proceedings.
Since 2008, we have been presenting some papers regarding CMOS 45nm logic gate patterning activity to reduce CD dispersion. After a global CD budget evaluation at SPIE08 [1], we have been focusing on Intrafield CD corrections using Dose Mapper[2].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b3cfd42306ebd56a82512b0952db53
https://doi.org/10.1117/12.845987
https://doi.org/10.1117/12.845987
Autor:
Lionel Thevenon, Alain Ostrovski, Marianne Decaux, Fabrice Baron, Nicolas Thivolle, Pascal Gouraud, Bertrand Le Gratiet, Jean-Damien Chapon, Romuald Faure, Boris VandeWalle, Laurene Babaud, K. Dabertrand, C. Monget, Frank Sundermann, Nicolas Cluet, Jean Massin
Publikováno v:
Proceedings of the SPIE-The International Society for Optical Engineering, Metrology, Inspection, and Process Control for Microlithography XXIII
Proceedings of the SPIE-The International Society for Optical Engineering, Metrology, Inspection, and Process Control for Microlithography XXIII, 2009, pp.72722-32
Proceedings of the SPIE-The International Society for Optical Engineering, Metrology, Inspection, and Process Control for Microlithography XXIII, 2009, pp.72722-32
CMOS 45nm technology, and especially the logic gate patterning has led us to hunt for every nanometer we could found to reach aggressive targets in term of overall CD budget. We have presented last year a paper ("Process Control for 45 nm CMOS logic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7976b5b86c48f540fb4cef5a80561c2e
https://doi.org/10.1117/12.812571
https://doi.org/10.1117/12.812571