Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nicolas Blasco"'
Autor:
Jamie Greer, Ono Takashi, Wontae Noh, Sunao Kamimura, Takashi Teramoto, Christian Dussarrat, Nicolas Blasco, Nicolas Gosset, Jooho Lee
Publikováno v:
Coatings, Vol 11, Iss 497, p 497 (2021)
Coatings
Volume 11
Issue 5
Coatings
Volume 11
Issue 5
The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49019217b974e847229a6953eb222197
https://doi.org/10.3390/coatings11050497
https://doi.org/10.3390/coatings11050497
Publikováno v:
ECS Transactions. 33:135-144
Ru and RuO2 films were deposited from Torus, a blend of RuO4. At low hydrogen dose RuO2 films were deposited at 200ºC. With sufficient dosing of hydrogen, Ru films were obtained; either a high enough hydrogen pressure or plasma was used. Process tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ae0cc305eb390378cf77341c9e3dbd2
https://doi.org/10.1149/1.3485250
https://doi.org/10.1149/1.3485250
Autor:
Virginie Brizé, Bernhard Holländer, Nevine Rochat, Benjamin J. Feist, Catherine Dubourdieu, Frédéric Terrenoir, Nicolas Blasco, Igor Matko
Publikováno v:
ECS Transactions. 13:157-162
Hf-Sc-O thin films were deposited at 500{degree sign}C on p-type Si(100)/SiO2 substrates by metal organic chemical vapour deposition. Hf(OtBu)2(mmp)2 and Sc(3mod)3 were used as precursors. The mixture of the precursors in a same solution leads to a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f26e188ed97349acf8477228310d8a8
https://doi.org/10.1149/1.2911495
https://doi.org/10.1149/1.2911495
Publikováno v:
Surface and Coatings Technology. 201:9120-9124
Novel tungsten precursors, WH2(iPrCp)2 and WH2(EtCp)2, with attractive thermal properties are introduced for Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) of tungsten containing films. Their thermal behavior has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadf4404c06d252db6f985034ae38c0e
https://doi.org/10.1016/j.surfcoat.2007.04.112
https://doi.org/10.1016/j.surfcoat.2007.04.112
Autor:
Geert Rampelberg, Nicolas Blasco, Christophe Detavernier, Kilian Devloo-Casier, Davy Deduytsche, Marc Schaekers
Publikováno v:
Applied Physics Letters
Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH3 plasma at deposition temperatures between 70 °C and 150 °C on silicon substrates and polymer foil. X-ray photoelectron spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::318fd1ae2463484eb182327d73e39e16
Autor:
Davy Deduytsche, Qi Xie, Koen Martens, C Detavernier, Kittl Jorge A, Marc Schaekers, Bob De Schutter, Geert Rampelberg, Nicolas Blasco
Publikováno v:
Atomic Layer Deposition, 11th International conference, Abstracts
Applied Physics Letters
Applied Physics Letters
Vanadium dioxide (VO2) has the interesting feature that it undergoes a reversible semiconductor-metal transition (SMT) when the temperature is varied near its transition temperature at 68°C.1 The variation in optical constants makes VO2 useful as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1e70dca77bd0f98ce1980d887fb8923
https://biblio.ugent.be/publication/4359946/file/4359950
https://biblio.ugent.be/publication/4359946/file/4359950
Autor:
Nicolas Blasco, Christophe Lachaud, Virginie Brizé, Stéphane Daniele, Audrey Pinchart, Catherine Dubourdieu, Mohamad Eleter
Publikováno v:
ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.151-158. ⟨10.1149/1.3207586⟩
ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.151-158. ⟨10.1149/1.3207586⟩
International audience; The identification of appropriate ligand-metal combinations, which successfully present the features of : (i) having acceptable melting point, (ii) being more thermally stable than hafnium alkylamides, (iii) having sufficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd31d2d205922b4c5b040ee3c23b92af
https://hal.archives-ouvertes.fr/hal-01067593
https://hal.archives-ouvertes.fr/hal-01067593
Autor:
Audrey Pinchart, Nicolas Blasco, Christophe Lachaud, Anthony Schleisman, Christian Dussarrat, Ikuo Suzuki, K. Yanagita
Publikováno v:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Atomic Layer Deposition (ALD) of Hf and Zr oxide films is of considerable interest and promise for future generation Metal-lnsulator-Metal (MIM) structures in memory applications. Hafnium and zirconium alkylamides such as tetrakis(ethylmethylamino) h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98f7f586975342aaf84a9fb47cf822c
https://doi.org/10.1109/asmc.2007.375090
https://doi.org/10.1109/asmc.2007.375090
Publikováno v:
ECS Meeting Abstracts. :1426-1426
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33e4c3780882a3e065c6ff873dd5e056
https://doi.org/10.1149/ma2010-02/20/1426
https://doi.org/10.1149/ma2010-02/20/1426
Autor:
Mohamad Eleter, Stephane Daniele, Virginie Brize, Catherine Dubourdieu, Christophe Lachaud, Nicolas Blasco, Audrey Pinchart
Publikováno v:
ECS Meeting Abstracts. :2481-2481
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c566608896a9c5a568e7bafdc68fb6
https://doi.org/10.1149/ma2009-02/34/2481
https://doi.org/10.1149/ma2009-02/34/2481