Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Nicolas, Ubrig"'
Autor:
Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recen
Externí odkaz:
https://doaj.org/article/e2dd53fd4ec64885b9e2f01a8fc27811
Autor:
Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Here, the authors report the realization of light-emitting field-effect transistors based on van der Waals heterostructures with conduction and valence band edges at the Γ-point of the Brillouin zone, showing electrically tunable and material-depend
Externí odkaz:
https://doaj.org/article/419320679ee844ef8606d8fd42191b5a
Autor:
Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/9e67e9e46c074898a054feabf616b9ca
Autor:
Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Many standard techniques for investigating magnetic properties in the bulk are ill suited to atomically thin van der Waals materials. Here, Wang et al take a prototypical van der Waals ferromagnet, Chromium Bromide, and show how tunneling conductance
Externí odkaz:
https://doaj.org/article/f8e1782d469e4008a15a86a1f3b8c586
Autor:
Nicolas, Ubrig
La découverte des nanotubes de carbone, il y a maintenant une vingtaine d'années, a été un des moteurs de la recherche des nanotechnologies. Ces particules illustrent l'amalgame entre le monde macroscopique et le monde appelé nano. Cette discipl
Externí odkaz:
http://tel.archives-ouvertes.fr/tel-00646148
http://tel.archives-ouvertes.fr/docs/00/64/61/48/PDF/These_Nicolas_Ubrig2011.pdf
http://tel.archives-ouvertes.fr/docs/00/64/61/48/PDF/These_Nicolas_Ubrig2011.pdf
Autor:
Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple t
Externí odkaz:
https://doaj.org/article/11526c5d779a414c9baf794ee9b8279b
Autor:
Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez‐Lezama, Nicolas Ubrig, Alberto F. Morpurgo
Publikováno v:
Advanced Materials.
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caa9f77d409d096ef8bad44e53297d41
https://doi.org/10.1002/adma.202211653
https://doi.org/10.1002/adma.202211653
Autor:
Chuanwu Cao, Margherita Melegari, Marc Philippi, Daniil Domaretskiy, Nicolas Ubrig, Ignacio Gutiérrez‐Lezama, Alberto F. Morpurgo
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make device fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe74c7e5a1c0550782eea5a4899ae845
http://arxiv.org/abs/2302.11967
http://arxiv.org/abs/2302.11967
Autor:
Giulia Tenasini, Edoardo Martino, Nicolas Ubrig, Nirmal J. Ghimire, Helmuth Berger, Oksana Zaharko, Fengcheng Wu, J. F. Mitchell, Ivar Martin, László Forró, Alberto F. Morpurgo
Publikováno v:
Physical Review Research, Vol 2, Iss 2, p 023051 (2020)
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can, in principle, be observed. Here w
Externí odkaz:
https://doaj.org/article/460509b544da4433a5b3cd3641d03a02
Autor:
David, Soler-Delgado, Fengrui, Yao, Dumitru, Dumcenco, Enrico, Giannini, Jiaruo, Li, Connor A, Occhialini, Riccardo, Comin, Nicolas, Ubrig, Alberto F, Morpurgo
Publikováno v:
Nano letters. 22(15)
We perform magnetotransport experiments on VI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fb50fd7265ae0a85e84bbab78f0f08b4
https://pubmed.ncbi.nlm.nih.gov/35867517
https://pubmed.ncbi.nlm.nih.gov/35867517