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Autor:
Alexandra Gourio, Surya Gupta, Akshay Kumar, Didier Gayraud, Laurent Vachez, Luc Palau, Piyush Jain, Jean-Christophe Buy, Abdelali El Amraoui, Giorgio Palma, Cyrille Dray, Nicolaas Van Winkelhoff
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Spin Transfer Torque Magneto-resistive Random- Access Memory (STT-MRAM) is emerging as a promising substitute for flash memories due to scaling challenges for flash in process nodes beyond 28nm. STT-MRAM’s high endurance, fast speed and low power m