Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Nicola Modolo"'
Autor:
Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identification of the related traps is challenging, especially in presence of non-ideal defects. In this paper, we propose a novel methodology (trap
Externí odkaz:
https://doaj.org/article/19975594cbff42dab96aa7ac9e686921
Autor:
Carlo De Santi, Luca Sayadi, Enrico Zanoni, Matteo Meneghini, Gerhard Prechtl, Sebastien Sicre, Gaudenzio Meneghesso, Andrea Minetto, Nicola Modolo
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:5019-5026
The goal of this paper is to advance the understanding of the impact of hard switching on the dynamic performance of GaN-based HEMTs. To this aim, we developed a fast (10 V/ns) on-wafer system for testing devices in hard switching. The system has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::310386f8afc3c72024312c03eeaac5ac
https://doi.org/10.1109/jestpe.2021.3077127
https://doi.org/10.1109/jestpe.2021.3077127
Autor:
Carlo De Santi, Luca Sayadi, Enrico Zanoni, Matteo Meneghini, Andrea Minetto, Gaudenzio Meneghesso, Nicola Modolo, Gerhard Prechtl, Sebastien Sicre
Publikováno v:
IEEE Electron Device Letters. 42:673-676
Hot electron trapping can significantly modify the performance of GaN-based HEMTs during hard switching operation. In this letter, we present a physics-based model based on rate equations to model the trapping kinetics of hot-electrons in GaN transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d4566d8bd83bdd32d877ccd6220249d
https://doi.org/10.1109/led.2021.3067796
https://doi.org/10.1109/led.2021.3067796
Autor:
Luca Sayadi, Oliver Häberlen, Bernd Deutschmann, Nicola Modolo, Matteo Meneghini, Andrea Minetto, Gerhard Prechtl, Enrico Zanoni, Sebastien Sicre, A. Nardo
Publikováno v:
IEEE Transactions on Electron Devices. 67:4602-4605
An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR}\,_{\mathrm{\scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12e931162c81665672eaf5efc9623e2a
https://doi.org/10.1109/ted.2020.3025983
https://doi.org/10.1109/ted.2020.3025983
Autor:
Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85f7a3448fd0610ea45b81a857a1eed7
https://hdl.handle.net/11577/3462161
https://hdl.handle.net/11577/3462161
Autor:
Enrico Zanoni, Fabiana Rampazzo, Carlo De Santi, Zhan Gao, Chandan Sharma, Nicola Modolo, Giovanni Verzellesi, Alessandro Chini, Gaudenzio Meneghesso, Matteo Meneghini
Publikováno v:
Physic Status Solid a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd69c0450bb121933ba7d46226598233
https://doi.org/10.1002/pssa.202100722
https://doi.org/10.1002/pssa.202100722
Autor:
Zhan Gao, Fabiana Rampazzo, Matteo Meneghini, Nicola Modolo, Carlo De Santi, Hervé Blanck, Hermann Stieglauer, Daniel Sommer, Jan Grünenpütt, Olof Kordina, Jr-Tai Chen, J-C Jacquet, C. Lacam, S. Piotrowicz, Gaudenzio Meneghesso, Enrico Zanoni
Publikováno v:
Microelectronics Reliability
On-wafer robustness and short-term reliability of 0.15 μm AlGaN/GaN HEMTs, fabricated on AlGaN buffer with and without a thin AlGaN “spike” layer between channel and buffer layers, have been compared. Results of DC characterization showed that d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8135db5f7f6fa634eb1a017542fcb47
http://hdl.handle.net/11577/3415139
http://hdl.handle.net/11577/3415139
Autor:
Luca Sayadi, Gaudenzio Meneghesso, Nicola Modolo, Matteo Meneghini, Carlo De Santi, Andrea Minetto, Gerhard Prechtl, Enrico Zanoni, Sebastien Sicre
Publikováno v:
IRPS
In this work, a detailed analysis of the turn-on behavior of E-mode p-GaN HEMT is reported, with a focus on the impact of hard switching conditions. The study is carried out by means of a novel custom system, developed with the purpose of investigati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::390ce5e09e39b37bc8cd3d8664dc1501
http://hdl.handle.net/11577/3390783
http://hdl.handle.net/11577/3390783
Autor:
Bernd Deutschmann, Gerhard Prechtl, Matteo Meneghini, Luca Sayadi, Nicola Modolo, Christian Koller, Andrea Minetto, Clemens Ostermaier, Enrico Zanoni, Oliver Häberlen, Sebastien Sicre
In this work, an analysis of the impact of drain field plate (FP) length on the semi- ON degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a fast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b18237efe3c8ed7d621cdb7ea9f13f3
http://hdl.handle.net/11577/3412527
http://hdl.handle.net/11577/3412527
Autor:
Bernd Deutschmann, Oliver Häberlen, Matteo Meneghini, Enrico Zanoni, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Nicola Modolo
This work contains an investigation of hot-electrons effects in GaN transistors during a hard-switching event by means of wafer-level measurements and TCAD mixed-mode hydrodynamic simulations. The latter reveals the presence of hot electrons at the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e7d0ebe068c97aeabe99eac2aa970c
http://hdl.handle.net/11577/3412518
http://hdl.handle.net/11577/3412518