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Autor:
Bernhard Lippmann, Ann-Christin Bette, Matthias Ludwig, Johannes Mutter, Johanna Baehr, Alexander Hepp, Horst Gieser, Nicola Kovac, Tobias Zweifel, Martin Rasche, Oliver Kellermann
Publikováno v:
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE).
The nitrogen-vacancy (NV) center occurs in GaAs bulk crystals doped or implanted with nitrogen. The local vibration of nitrogen gives rise to a sharp infrared absorption band at 638 cm$^{-1}$, exhibiting a fine structure due to the different masses o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e785dd63fc21b5caffbfd2c4509b8e7