Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nicklaw, Christopher"'
Autor:
Nicklaw, Christopher J
Oxygen vacancies have long been known to be the dominant intrinsic defect in amorphous SiO2. They exist, in concentrations dependent on processing conditions, as neutral defects in thermal oxides without usually causing any significant deleterious ef
Autor:
Nicklaw, Christopher J.
Thesis (Ph. D. in Electrical Engineering)--Vanderbilt University, Aug. 2003.
Title from title screen. Includes bibliographical references.
Title from title screen. Includes bibliographical references.
Autor:
Javanainen, Arto, Turowski, Marek, Galloway, Kenneth F., Nicklaw, Christopher, Ferlet-Cavrois, Véronique, Bosser, Alexandre, Lauenstein, Jean-Marie, Muschitiello, Michele, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronal D., Weller, Robert A., Virtanen, Ari
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1222::0b41452d0aa735058db686f2bd9be4c7
http://urn.fi/URN:NBN:fi:jyu-201708243552
http://urn.fi/URN:NBN:fi:jyu-201708243552
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.