Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Nick yun"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 989-995 (2022)
1.2kV 4H-SiC MOSFETs with different junction depths of JFET and P-well regions were fabricated. For each JFET/P-well depth combination, channel lengths and JFET widths were also varied to compare specific on-resistance, breakdown voltage, and short-c
Externí odkaz:
https://doaj.org/article/f246663b53584e9e9e6b8a681ae4517a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 495-503 (2022)
SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse rec
Externí odkaz:
https://doaj.org/article/859cb6448bc44aa1ba441aa4e7d8c9ea
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 804-812 (2021)
A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared with respect to the output and transfer characteristics,
Externí odkaz:
https://doaj.org/article/90459cb704784e98baaa02d16284db15
Autor:
Nick Yun, Woongje Sung
Publikováno v:
IEEE Transactions on Electron Devices. 69:3826-3832
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320eeacc8c64bc231adb8007556e9d72
https://doi.org/10.1109/ted.2022.3175707
https://doi.org/10.1109/ted.2022.3175707
Autor:
Dongyoung Kim, Skylar DeBoer, Stephen A Mancini, Sundar Babu Isukapati, Justin Lynch, Nick Yun, Adam J Morgan, Seung Yup Jang, Woongje Sung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2101162fefecea5ca6eaedf4f25b3c4
https://doi.org/10.1109/irps48203.2023.10118091
https://doi.org/10.1109/irps48203.2023.10118091
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::debe85c3a38cc9ccc7b9e390e4ecbfae
https://doi.org/10.1109/wipda56483.2022.9955256
https://doi.org/10.1109/wipda56483.2022.9955256
Autor:
Zichen Zhang, Shengchang Lu, Carl Nicholas, Nick Yun, Woongje Sung, Khai D.T. Ngo, Guo-Quan Lu
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35106a64e083b88cddca4e1cd222e308
https://doi.org/10.1109/ecce50734.2022.9947881
https://doi.org/10.1109/ecce50734.2022.9947881
Autor:
Woongje Sung, Nick Yun
Publikováno v:
IEEE Transactions on Electron Devices. 67:5005-5011
This article reports the demonstration and fabrication of 400–600 V, 4H-SiC lateral MOSFETs on 6-in, N+ substrates. The P-top was implanted on an $\text{N}\boldsymbol -$ drift region to create a single reduced surface field (RESURF) structure to al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad3a3997ca85ad75771e166d06fb422
https://doi.org/10.1109/ted.2020.3027652
https://doi.org/10.1109/ted.2020.3027652
Autor:
Adam J. Morgan, Aivars J. Lelis, Anant K. Agarwal, Minseok Kang, Justin Lynch, Dongyoung Kim, Ronald Green, Woongje Sung, Nick Yun
Publikováno v:
IEEE Transactions on Electron Devices. 67:4346-4353
13-kV 4H-SiC MOSFETs were successfully fabricated on a 125- $\mu \text{m}$ -thick epitaxial layer on 6-in, N+ SiC substrates. Both lateral and longitudinal straggles from the P-well implant were investigated to optimize the JFET width and thus to avo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d26b489ea2542e0c1ff80b93875857c0
https://doi.org/10.1109/ted.2020.3017150
https://doi.org/10.1109/ted.2020.3017150
Publikováno v:
Materials Science Forum. 1004:830-836
This paper aims to provide detailed experimental results of 4H-SiC vertical and lateral MOSFETs fabricated on the same 6-inch substrate using a single process flow. The cell optimization and fabrication scheme of both vertical and lateral MOSFETs are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7660e54f4585ba1f937545c95802f1c7
https://doi.org/10.4028/www.scientific.net/msf.1004.830
https://doi.org/10.4028/www.scientific.net/msf.1004.830