Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nick Tao"'
Autor:
Qiaoyu Hu, Wei-Chih Cheng, Xiguang Chen, Chenkai Deng, Lina Liao, Wenmao Li, Yang Jiang, Jiaqi He, Yi Zhang, Chuying Tang, Peiran Wang, Kangyao Wen, Fangzhou Du, Yifan Cui, Mujun Li, Wenyue Yu, Robert Sokolovskij, Nick Tao, Qing Wang, Hongyu Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 875-880 (2024)
This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N2 and N2O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON la
Externí odkaz:
https://doaj.org/article/a28f9147334140db810717599c6c959e
Autor:
Chenkai Deng, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, Kangyao Wen, Wenmao Li, Nick Tao, Qing Wang, Hongyu Yu
Publikováno v:
Nanomaterials, Vol 14, Iss 18, p 1471 (2024)
In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak elec
Externí odkaz:
https://doaj.org/article/86df95d5e0e845d5b75288dcc2a694a2
Autor:
Peiran Wang, Chenkai Deng, Hongyu Cheng, Weichih Cheng, Fangzhou Du, Chuying Tang, Chunqi Geng, Nick Tao, Qing Wang, Hongyu Yu
Publikováno v:
Crystals, Vol 13, Iss 1, p 110 (2023)
In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATL
Externí odkaz:
https://doaj.org/article/aa6e1b06d12f48d2ade48d3bc6b83b19
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).