Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Nick Savvides"'
The complex dielectric constant of amorphous hydrogenated carbon films was determined by reflection and transmission measurements in the photon energy range from 0.5 to 6.54 eV. The results, determined by the application of a sum rule, showed the pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1754a99d4800291bce145f46da9fe88a
https://doi.org/10.1016/0040-6090(83)90072-x
https://doi.org/10.1016/0040-6090(83)90072-x
Publikováno v:
Electrochimica Acta. 75:371-380
Thin films of WO3 were deposited on FTO-coated glass substrates by electrodeposition using aqueous solutions of peroxotungstic acid. The effects of varying the tungsten concentration of peroxotungstic acid and deposition time on the mineralogical, mi
Publikováno v:
Thin Solid Films. 519:3213-3220
Nanolayered materials consisting of alternate layers of two different metals offer enhanced mechanical properties such as hardness but the strengthening mechanism is not well understood when the bilayer thickness approaches a few nanometers. Here, we
Autor:
Haiyan Chen, Nick Savvides
Publikováno v:
Journal of Crystal Growth. 312:2328-2334
High-quality crystals of the thermoelectric compound Mg 2 Sn doped with Ag were synthesized by radio-frequency (RF) induction melting, and their properties are compared with similar crystals prepared by the Bridgman method that uses conventional resi
Autor:
Nick Savvides, Haiyan Chen
Publikováno v:
Journal of Electronic Materials. 39:1792-1797
Ingots of undoped and Ag-doped Mg2Sn were prepared from the melt using a rocking Bridgman furnace at different cooling rates: slow cooling (0.1 K/min), moderate cooling (1 K/min), and rapid quenching. The ingots show very different microstructure and
Publikováno v:
Journal of Electronic Materials. 39:1971-1974
Silver doped p-type Mg2Ge thin films were grown in situ at 773 K using magnetron co-sputtering from individual high-purity Mg and Ge targets. A sacrificial base layer of silver of various thicknesses from 4 nm to 20 nm was initially deposited onto th
Autor:
Haiyan Chen, Nick Savvides
Publikováno v:
Journal of Electronic Materials. 39:2136-2141
The temperature dependence of the thermal conductivity κ(T), electrical resistivity ρ(T), and Seebeck coefficient S(T) of Mg2Sn:Ag crystals with 0 at.% to 1 at.% Ag content were measured at T = 2 K to 400 K. The crystals were cut from ingots that w
Publikováno v:
Thin Solid Films. 517:3698-3703
Structure, hardness, and elastic modulus of nanolayered aluminium/palladium thin films, with individual layer thickness varying from 1 nm to 40 nm, were investigated using transmission electron microscopy (TEM) and nanoindentation. TEM micrographs in
Autor:
Nick Savvides, Haiyan Chen
Publikováno v:
Journal of Electronic Materials. 38:1056-1060
Mg2Sn compounds were prepared by the modified vertical Bridgman method, and were doped with Bi and Ag to obtain n- and p-type materials, respectively. Excess Mg was also added to some of the ingots to compensate for the loss of Mg during the preparat
Publikováno v:
The Journal of Physical Chemistry C. 111:16477-16488
Doped and undoped hematite (α-Fe2O3) thin film electrodes for photoelectrochemical hydrogen production have been prepared using reactive magnetron sputtering. We present an extensive characterization of the photoelectrochemical, structural, electric