Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Nick Kepler"'
Publikováno v:
IEEE Transactions on Electron Devices. 45:1253-1262
Gate depletion and boron penetration through thin gate oxide place directly opposing requirements on the gate engineering for advanced MOSFET's. In this paper, several important issues of deep-submicron CMOS transistor gate engineering are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea6a20a31997d93755a56375035951e
https://doi.org/10.1109/16.678529
https://doi.org/10.1109/16.678529
Autor:
Mario M. Pelella, JR Zhou, David Eppes, Mike Leary, Stephen Hale, Date Noorlag, Larry Bullard, Peter Huebler, Stefan Schuler, Andreas Dreizner, Jim Working, Darin Chan, Christoph Schwan, Manfred Horstmann, Bill En, Karsten Wieczorek, David Greenlaw, Thomas Heidel, Volker Heinig, John Miethke, Nick Kepler, Stephan Kruegel, Kai Frohberg, Jason Rivers, Thomas Heller, Ralf Richter, Norma Rodriguez, Rich Klein
Publikováno v:
2007 IEEE International SOI Conference.
A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved produc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b03dfb978a7a34245474febbdb674f5
https://doi.org/10.1109/soi.2007.4357860
https://doi.org/10.1109/soi.2007.4357860
Publikováno v:
IEEE Electron Device Letters. 18:312-314
The effect of nitrogen (N/sub 14/)implant into dual-doped polysilicon gates was investigated. The electrical characteristics of sub-0.25-/spl mu/m dual-gate transistors (both p- and n-channel), MOS capacitor quasi-static C-V curve, SIMS profile, poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea0bc4a4e2d8ea5dd639baa7f9187c00
https://doi.org/10.1109/55.596922
https://doi.org/10.1109/55.596922
Publikováno v:
1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319).
This paper investigate the impact of CMOS (complementary metal-oxide-semiconductor) gate microstructure on the reliability and performance of deep-submicrometer CMOS transistors. The amorphous silicon (/spl alpha/-Si) gate provides better capability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5be0bc847911e35cdeb173d09f85497
https://doi.org/10.1109/irws.1997.660278
https://doi.org/10.1109/irws.1997.660278
Publikováno v:
Japanese Journal of Applied Physics. 36:L1150
This letter reports on the impact of gate microstructure on deep-submicron complementary metal-oxide-semiconductor (CMOS) device performance. Transistors with different gate microstructures (α-Si gate vs poly-Si gate) were fabricated using a 2.5 V s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3f71f3b77cbb30e890ff9372093970
https://doi.org/10.1143/jjap.36.l1150
https://doi.org/10.1143/jjap.36.l1150
Autor:
Conlin, Michelle
Publikováno v:
BusinessWeek. 11/29/99, Issue 3657, p164-170. 4p. 5 Color Photographs.
Conference
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Publikováno v:
Solid State Technology. Sep2006, Vol. 49 Issue 9, Special section p1-1. 1p.