Zobrazeno 1 - 10
of 586
pro vyhledávání: '"Nick Holonyak"'
Publikováno v:
IEEE Journal of Quantum Electronics. 54:1-15
The electrically pumped vertical-cavity surface-emitting laser (VCSEL) was first demonstrated with metal cavities by Iga (1979); however, the device threshold current was too high. Distributed Bragg reflector cavities proposed by Scifres and Burnham
Publikováno v:
Conference on Lasers and Electro-Optics.
Publikováno v:
OFC
850nm VCSELs record performance of 46Gb/s (RT), 43Gb/s (75°C) and 42Gb/s (85°C) error-free transmission for a 100 meter MMF link are reported without the use of equalizer or forward error correction.
Publikováno v:
Conference on Lasers and Electro-Optics.
Optical bistability in a single semiconductor transistor laser are realized and demonstrated based on the modulation of cavity photon density via the base quantum-wells for photon-generation and collector intra-cavity photon assisted tunneling for ph
Publikováno v:
IEEE Photonics Technology Letters. 27:600-603
Data are presented showing error-free transmission by a 200- $\mu $ m-long transistor laser at 15 °C. The device has a threshold current of 30 mA and exhibits a modulation bandwidth of $f_{\mathbf {-3dB}} = 10.4$ GHz at I $_{B}= 85$ mA and V $_{\mat
Publikováno v:
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM).
VCSEL bandwidth is limited by slow e-h recombination lifetime nanosecond to ∼ 30 GHz (60Gb/s). The transistor laser (TL) has picosecond radiative recombination lifetime; thus, it will have modulation bandwidth higher than VCSELs toward 150 GHz to a
Publikováno v:
IEEE Photonics Technology Letters. 26:1542-1545
Publikováno v:
IEEE Photonics Technology Letters. 26:1003-1006
Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositi
Publikováno v:
IEEE Photonics Technology Letters. 26:702-705
A 780 nm emission wavelength (far-red) oxide-confined vertical cavity surface-emitting laser with a threshold current of 0.6 mA at 20 °C is demonstrated. The device shows an 11.2 GHz modulation bandwidth when biased at I=8 mA (I/ITH=13.3), and it ac
Publikováno v:
IEEE Photonics Technology Letters. 26:289-292
We have designed and fabricated a high speed 850 nm oxide-confined vertical cavity surface emitting laser with an oxide aperture dimension of ~ 4 μm and a threshold current ITH=0.53 mA at room temperature (20 °C). It demonstrates a modulation bandw