Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Nick Brakensiek"'
Autor:
Douglas Guerrero, Glenn Dado, Virgil Briggs, Shyam Paudel, Nick Brakensiek, Levi Gildehaus, Tim Limmer, Michael Mesawich, Vineet Alexander, Mona Bavarian, Rao Varanasi, Lucia D'Urzo
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
The silicon hardmask (Si-HM) is one of the key materials used in multilayer lithography for pattern transfer to a substrate using a fluorinated plasma etching process. Manufacturing of devices with smaller feature sizes introduces new challenges in d
Autor:
Christophe Navarro, Julien Beausoleil, Darron Jurajda, Nick Brakensiek, Celia Nicolet, Xavier Chevalier, John Berron, Kaumba Sakavuyi, Ian Cayrefourcq
Publikováno v:
Journal of Photopolymer Science and Technology. 29:671-674
Autor:
Michael Cronin, Nick Brakensiek
Publikováno v:
SPIE Proceedings.
Recent innovations in device design, including FinFETs and metal gate technologies, have required similar innovation in lithographic materials and process development. Complex processes such as double patterning and multilayer imaging require new and
Autor:
Nick Brakensiek, Michael Sevegney
Publikováno v:
SPIE Proceedings.
Photofluid dispense systems within coater/developer tools have been designed with the intent to minimize cost of ownership to the end user. Waste and defect minimization, dispense quality and repeatability, and ease of use are all desired characteris
Publikováno v:
SPIE Proceedings.
Autor:
Charlyn Stroud, Carlton Washburn, Nick Brakensiek, Kevin Edwards, Alice Guerrero, Nicki Chapman
Publikováno v:
SPIE Proceedings.
This paper describes a new approach to help overcome the challenges of fabricating leading-edge devices by using the trench first dual damascene process. Wet gap-fill materials are designed to reduce film thickness bias across a wafer while keeping w
Publikováno v:
SPIE Proceedings.
The work described here produced a new method of forming microlenses which requires fewer processing steps, eliminates the need for reflow or photoresist etching steps, and can be used with an inexpensive mask to form arrays. In this new method, a st
Publikováno v:
SPIE Proceedings.
Spin on bottom anti-reflective coatings were introduced to the semiconductor industry about 20 years ago to help control substrate reflectivity, improve critical dimension (CD) control, and, most importantly, improve depth of focus window, thus impro
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