Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nicholas Theodore Schmidt"'
Autor:
Randy L. Wolf, Robert M. Rassel, Shyam Parthasarathy, Mccallum-Cook Ian, Hanyi Ding, K. Newton, Renata Camillo-Castillo, Anthony K. Stamper, Mark D. Jaffe, Alvin J. Joseph, James S. Dunn, Michael J. Zierak, Srikanth Srihari, Vibhor Jain, Nicholas Theodore Schmidt
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1651b1e12c438e8df1171a884ce0492b
https://doi.org/10.1109/bctm.2014.6981278
https://doi.org/10.1109/bctm.2014.6981278
Autor:
Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680dcea7dc29df2e8835d3376d5fc255
https://doi.org/10.1109/bipol.2008.4662721
https://doi.org/10.1109/bipol.2008.4662721
Autor:
A.D. Strieker, Natalie B. Feilchenfeld, Benjamin T. Voegeli, K. Watson, J. Dunn, J. Rascoe, K. Newton, Peter B. Gray, S. St Onge, Nicholas Theodore Schmidt, B.A. Rainey
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
An isolated vertical PNP BJT with f/sub T/ and f/sub MAX/ of 20GHz available as a modular component in a 0.18/spl mu/m SiGe BiCMOS technology is described. The VPNP device is fabricated using a low complexity integration scheme and is optimized to co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ee83a09e685937bd00184da8ab4b2dc
https://doi.org/10.1109/bipol.2005.1555218
https://doi.org/10.1109/bipol.2005.1555218
Autor:
Bernard S. Meyerson, Natalie B. Feilchenfeld, E. Eld, R. Johnson, David L. Harame, Alan B. Botula, J. Joseph, J. Dunn, Nicholas Theodore Schmidt, J. Malinowski, Steven H. Voldman, P. Juliano, Ciaran J. Brennan, Louis D. Lanzerotti, V. Gross, D. Herman
Publikováno v:
Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).
High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64ea132ddf8f7462c32eaf3abeaac5b4
https://doi.org/10.1109/bipol.2000.886208
https://doi.org/10.1109/bipol.2000.886208
Autor:
Elyse Rosenbaum, J. Dunn, Steven H. Voldman, S. Furkay, Bernard S. Meyerson, R. Johnson, Alvin J. Joseph, David L. Harame, Nicholas Theodore Schmidt, P. Juliano
Publikováno v:
2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
This paper investigates high-current and electrostatic discharge (ESD) phenomenon in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBT). Transmission line pulse (TLP) and ESD human body model (HBM) wafer-le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f8f2c90a014aa600e7ec3ef367a4c0
https://doi.org/10.1109/relphy.2000.843932
https://doi.org/10.1109/relphy.2000.843932