Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Nicholas K. Eib"'
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:033507
The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to
Publikováno v:
Journal of The Electrochemical Society. 141:1034-1040
Current photospeed testing methods are based on dose to clear (E 0 ) or resist contrast (γ 10 ). Either method is inadequate for controlling sensitivity to within ±1.5%. We investigated various methods for improving these photospeed tests. Ranked i
Autor:
Jason D. Hintersteiner, Nabila Baba-Ali, Sherman K. Poultney, Azat Latypov, Ronald P. Albright, Wenceslao A. Cebuhar, Ebo H. Croffie, Elizabeth Stone, Nicholas K. Eib
Publikováno v:
SPIE Proceedings.
In Optical Maskless Lithography, the die pattern to be printed is generated by a contrast device, known as a Spatial Light Modulator. The contrast device consists of a multitude of micro-mirror pixels that are independently actuated. Different physic
Autor:
Ebo H. Croffie, Nicholas K. Eib
Publikováno v:
Optical Microlithography XVIII.
Ever-increasing reticle cost makes optical maskless lithography an attractive alternative to mask-based technologies, particularly for low-volume runs such as prototypes, ASIC personalization, and engineering short loops. If the resolution and imagin
Publikováno v:
SPIE Proceedings.
We have been exploring alternating aperture phase-shifting masks for Application Specific Integrated Circuit poly gate CD's below 100 nm. The implementation is dark field altPSM with a complementary bright field binary 'trim' mask. The alternating ph
Publikováno v:
Advances in Resist Technology and Processing XVII.
Deep ultraviolet (DUV) bottom anti-reflective coating (BARC)- to-resist compatibility is a key component in process optimization. In addition to the reduction of optical interference effects, BARC's also improve CD uniformity by preventing substrate
Autor:
Keith K. Chao, John V. Jensen, Mario Garza, Eytan Barouch, Saeed Sabouri, Steven A. Orszag, Uwe Hollerbach, Nicholas K. Eib, Wayne P. Shen, K. C. Wang, Vijaya N.V. Raghavan, Theron L. Felmlee, Eric Jackson
Publikováno v:
SPIE Proceedings.
We present results of a verification study of totally automated optical proximity correction (OPC) for mask redesign to enhance process capability. OPC was performed on an aggressive 0.35 micrometer i-line LSI logic SRAM design using the automated OP
Autor:
Marina V. Plat, Christopher F. Lyons, William R. Brunsvold, Randolph S. Smith, Nicholas K. Eib
Publikováno v:
SPIE Proceedings.
This study evaluates the effect of dyes, including photosensitive dyes, on resist performance such as: swing curve reduction, resist dissolution rate, resolution, dose and focus latitude, scumming, etc. The paper demonstrates good correlation between
Autor:
John L. Sturtevant, Nicholas K. Eib, Kevin M. Welsh, Gary T. Spinillo, Steve Seiichi Miura, Wayne M. Moreau, James Thomas Fahey
Publikováno v:
Advances in Resist Technology and Processing XI.
The advent of deep-UV(DUV), chemically amplified, acid catalyzed photoresists as successors to positive diazoquinones photoresists has brought about a new set of process environment concerns directed towards all materials in contact or absorbed by th
Publikováno v:
Advances in Resist Technology and Processing X.
An investigation of the dissolution behavior of an acid catalyzed deep ultraviolet (DUV) positive resist has been completed. The immersion develop dissolution rate as a function of dose and post exposure bake temperature was measured by Perkin Elmer