Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Nicholas H. Tripsas"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:48-51
The mechanism responsible for charging damage to integrated circuit device insulators is treated as a plasma phenomenon, in which the beam/plasma drives potential differences on the process surface. J−V data obtained with the CHARM2 diagnostic in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::819abd78b0d41ecc7e764d9d27143cd3
https://doi.org/10.1016/0168-583x(94)00452-8
https://doi.org/10.1016/0168-583x(94)00452-8
Autor:
Nicholas H. Tripsas, R. Johnson
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Process qualifications are required as new equipment is added to a fab to ensure good product quality. For Ion Implanters, dose-matching of machines is a necessary first step in this procedure. Split-lot qualifications are also commonly run prior to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::241f42f15ac3165484f9a7e92e030848
https://doi.org/10.1109/iit.1996.586416
https://doi.org/10.1109/iit.1996.586416
Autor:
Nicholas H. Tripsas
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Equipment matching is a major consideration for process transfers between fab areas. When process transfers occur between fabs with similar equipment, simple dose matching is often adequate. However, it is not enough in the ease where transfers occur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4838f483bab9c2c6348c1de271ecb87c
https://doi.org/10.1109/iit.1996.586420
https://doi.org/10.1109/iit.1996.586420
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Wafer charging effects in an Applied Materials 9500 implanter were studied for high current As and BF2 implants with EEPROM-based sense and measurement devices (CHARM(R)-2) and transistor structures (SPIDER). The operational modes of the implanter we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32515a72ba73dca6fed315461a28a58e
https://doi.org/10.1109/iit.1996.586123
https://doi.org/10.1109/iit.1996.586123
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