Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Nicholas C. Varaljay"'
Autor:
Michael R. Gasper, Ryan C. Toonen, Nicholas C. Varaljay, Robert R. Romanofsky, Felix A. Miranda
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 1, Pp 25-30 (2020)
Commercially available, chemical vapor deposition grown, graphene has been used to realize voltage-gate tunable, microwave power detectors. Corbino disc structures with chrome/gold contacts have been fabricated on top of graphene deposited on P-type
Externí odkaz:
https://doaj.org/article/da3372fc73cf46209142544d6fee71fe
Autor:
Michael R. Gasper, Robert R. Romanofsky, Felix A. Miranda, Ryan C. Toonen, Nicholas C. Varaljay
Publikováno v:
IEEE Transactions on Nanotechnology. 18:879-884
Microwave power detectors were realized using nano-constrictions fabricated from commercially-available monolayer graphene, synthesized by means of chemical vapor deposition. The graphene nano-constrictions (GNCs) were fabricated so as to shunt the i
Autor:
Michael R. Gasper, Felix A. Miranda, Robert R. Romanofsky, Ryan C. Toonen, Nicholas C. Varaljay
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graph
Autor:
Michael R. Gasper, Robert R. Romanofsky, Venkata Sai Praneeth Karempudi, Nicholas C. Varaljay, Blake C. Amacher, Nitin Parsa, Ramesh Sivarajan, Ryan C. Toonen, Colleen E. Treacy, Felix A. Miranda
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V.
We have investigated microwave power detection based from carbon nanotube (CNT) thin films and chemical vapor deposition (CVD) grown graphene. Our experiments indicate that power detection from the CNT devices is primarily due to bolometric mechanism
Autor:
Nicholas C. Varaljay, Sloan Zimmerman, Rocco J. Parro, Christian A. Zorman, Maximilian C. Scardelletti
Publikováno v:
Solid-State Electronics. 52:1647-1651
This paper reports an effort to develop amorphous silicon carbide (a-SiC) films for use in shunt capacitor RF MEMS microbridge-based switches. The films were deposited using methane and silane as the precursor gases. Switches were fabricated using 50
Autor:
Robert R. Romanofsky, Samuel A. Alterovitz, F. W. Van Keuls, Felix A. Miranda, Carl H. Mueller, Nicholas C. Varaljay
Publikováno v:
Integrated Ferroelectrics. 77:51-62
Many individual tunable ferroelectric-based microwave components have demonstrated excellent performance. However data on the production of many identical devices has been lacking. This paper will present data from NASA Glenn Research Center's fabric
Autor:
Nicholas C. Varaljay, Elizabeth A. McQuaid, Christian A. Zorman, J.L. Jordan, George E. Ponchak, Maximilian C. Scardelletti
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
In this paper, we present the design, fabrication and characterization of thin film, silicon carbide (SiC) metal-insulator-metal capacitors over a temperature range of 25 to 500oC. The 600 nm thick silicon carbide insulating film was grown with a pla
Publikováno v:
33rd European Microwave Conference, 2003.
For the first time, RF MEMS switches on CMOS grade Si with a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained.
Publikováno v:
IEEE Antennas and Propagation Society International Symposium (IEEE Cat. No.02CH37313).
Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an
Autor:
C. M. Mueller, Nicholas C. Varaljay, T. Schnabel, Felix A. Miranda, S.J. Fiedziuszko, R.S. Kwok
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
Multilayer dual mode HTS filter is the smallest known high-performance filter structure, occupying less than 1% in volume as compared to the state-of-the-art dielectric resonator counterpart. It can also be manufactured in form of a flat-pack surface