Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Nicholas C. Miller"'
Autor:
Nicholas C. Miller, Alexis Brown, Michael Elliott, Ryan Gilbert, Devin T. Davis, Ahmad E. Islam, Dennis Walker, Gary Hughes, Kyle Liddy, Kelson D. Chabak
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 531-538 (2023)
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperatures. Sever
Externí odkaz:
https://doaj.org/article/5652d6efb28e435ba8a596cb3791a18a
Autor:
Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz
Publikováno v:
IEEE Journal of Microwaves, Vol 3, Iss 4, Pp 1134-1146 (2023)
This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the
Externí odkaz:
https://doaj.org/article/5804e21f09df408e99c176f577a6bee9
Autor:
Nicholas C. Miller, Michael Elliott, Eythan Lam, Ryan Gilbert, Jansen Uyeda, Robert L. Coffie
Publikováno v:
IEEE Journal of Microwaves, Vol 3, Iss 3, Pp 1005-1013 (2023)
This article presents an empirical investigation of calibration effects on load-pull measurements collected on wafer and at W-band frequencies. An analysis of scattering parameter (S-parameter) measurements provides insight into how small-signal metr
Externí odkaz:
https://doaj.org/article/8b01641245874148b94e55f7635e47e4
Autor:
Jeong-Sun Moon, Bob Grabar, Joel Wong, Chuong Dao, Erdem Arkun, Haw Tai, Dave Fanning, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Nivedhita Venkatesan, Patrick Fay
Publikováno v:
IEEE Microwave and Wireless Technology Letters. 33:161-164
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660ec69a38c1b82c6de9214527c8e15c
https://doi.org/10.1109/lmwc.2022.3207978
https://doi.org/10.1109/lmwc.2022.3207978
Autor:
Nicholas C. Miller, Matt Grupen, Ahmad E. Islam, John D. Albrecht, Dave Frey, Richard Young, Miles Lindquist, Andrew J. Green, Dennis E. Walker, Kelson D. Chabak
Publikováno v:
IEEE Transactions on Electron Devices. 70:435-442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca50b2459d44800c843f52fd9879278
https://doi.org/10.1109/ted.2022.3229291
https://doi.org/10.1109/ted.2022.3229291
Publikováno v:
IEEE Electron Device Letters. 43:1633-1636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::940451a646512afdedbf17636184c342
https://doi.org/10.1109/led.2022.3197800
https://doi.org/10.1109/led.2022.3197800
Publikováno v:
2023 IEEE Wireless and Microwave Technology Conference (WAMICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6195d6f009f1ce6a23463b521c08777
https://doi.org/10.1109/wamicon57636.2023.10124913
https://doi.org/10.1109/wamicon57636.2023.10124913
Autor:
Ashwin Tunga, Kexin Li, Ethan White, Nicholas C. Miller, Matt Grupen, John D. Albrecht, Shaloo Rakheja
Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from Synopsys. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4b0e5458f2ed58f221563ba08479113
http://arxiv.org/abs/2208.03576
http://arxiv.org/abs/2208.03576
Publikováno v:
2022 99th ARFTG Microwave Measurement Conference (ARFTG).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f67c3ed63a1dfcc3ed3dce7e3b57f2a
https://doi.org/10.1109/arftg54656.2022.9896585
https://doi.org/10.1109/arftg54656.2022.9896585
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7145441faf53bb34c3042bbf55a87e76
https://doi.org/10.1109/ims37962.2022.9865304
https://doi.org/10.1109/ims37962.2022.9865304