Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Niannian Yu"'
Autor:
Ruizhe Zhao, Ke Gao, Rongjiang Zhu, Zhuoran Zhang, Qiang He, Ming Xu, Niannian Yu, Hao Tong, Xiangshui Miao
Publikováno v:
InfoMat, Vol 6, Iss 9, Pp n/a-n/a (2024)
Abstract Crystallization speed of phase change material is one of the main obstacles for the application of phase change memory (PCM) as storage class memory in computing systems, which requires the combination of nonvolatility with ultra‐fast oper
Externí odkaz:
https://doaj.org/article/f999f0cb92214bd78a82d13ea09cf76a
Autor:
Qimei WU, Ying LI, Zhirong LI, Mingrong LIU, Jimin MA, Niannian YU, Rongxiang CHEN, Yaping ZHOU
Publikováno v:
Guangxi Zhiwu, Vol 43, Iss 6, Pp 1124-1134 (2023)
In order to study the spectrum-effect relationship between fingerprint and antioxidant activity of the leaves of Vitex negundo var. cannabifolia, the fingerprints of 18 batches of V. negundo var. cannabifolia leaves were established by high performan
Externí odkaz:
https://doaj.org/article/9e59fd47fe05426ebac52dd030bcdf52
Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications
Autor:
Amirhossein Hasani, Ribwar Ahmadi, Amin Abnavi, Michael M. Adachi, Mohammad Reza Mohammadzadeh, Mirette Fawzy, Niannian Yu, Thushani De Silva
Publikováno v:
ACS Applied Materials & Interfaces. 13:45843-45853
Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for high-integration-density applications such as data storage due to their small vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c309af826818ca6488f31421270e60e1
https://doi.org/10.1021/acsami.1c11359
https://doi.org/10.1021/acsami.1c11359
Publikováno v:
Small Methods. :2201679
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2818fbb9f4fbd2f3c67d02b44ca9bff8
https://doi.org/10.1002/smtd.202201679
https://doi.org/10.1002/smtd.202201679
Publikováno v:
Materials Letters. 254:186-189
We comprehensively study the influences of Ti doping on the phase change properties of Sn2Se3 film through experiments and ab initio molecular dynamics simulations. Both the crystallization temperature and the activation energy of Sn2Se3 increase sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd82ae457a646d93ee27b16e80b6d88
https://doi.org/10.1016/j.matlet.2019.07.049
https://doi.org/10.1016/j.matlet.2019.07.049
Publikováno v:
Applied Surface Science. 471:18-22
Rashba effect is much related to next-generation spintronic devices. It is highly desirable to search for Rashba materials with large Rashba spin splitting, which is considered as the key factor for the application of spin field-effect transistor. He
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495361486d4a428c592bd976ad2e6d91
https://doi.org/10.1016/j.apsusc.2018.11.214
https://doi.org/10.1016/j.apsusc.2018.11.214
Publikováno v:
Applied Surface Science. 436:919-926
The successful fabrication of two-dimensional lateral heterostructures (LHS’s) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8647ec002dd52c254e1e4faee3b21ef
https://doi.org/10.1016/j.apsusc.2017.12.093
https://doi.org/10.1016/j.apsusc.2017.12.093
Publikováno v:
Applied Surface Science. 427:10-14
Interlayer distance induced Rashba spin splitting is predicted in graphene and monolayer iodinated arsenene (As-I) van der Waals heterostructures based on first-principle calculations. The equilibrium structure of graphene/As-I exhibits a linear Dira
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71226b93f50f8a0104388bb04afbf025
https://doi.org/10.1016/j.apsusc.2017.08.188
https://doi.org/10.1016/j.apsusc.2017.08.188
Publikováno v:
Journal of Solid State Chemistry. 303:122448
2D materials show exciting prospects in the application of nonvolatile resistive random-access memory (RRAM). Here, by using first-principles calculations based on density functional theory, we demonstrate that the experimentally observed resistive s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aab1ced3515290dbca849174b512610
https://doi.org/10.1016/j.jssc.2021.122448
https://doi.org/10.1016/j.jssc.2021.122448
Publikováno v:
Applied Surface Science. 409:85-90
Using first-principles calculations based on density functional theory (DFT), we have investigated the structure stability and electronic properties of both buckled and 8- Pmmn phase aluminene. Phonon dispersion analysis reveals that the buckled and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9208e796084e1d0527b0c60dca55ab9
https://doi.org/10.1016/j.apsusc.2017.02.238
https://doi.org/10.1016/j.apsusc.2017.02.238