Doping Density Extraction of Plasma Treated Metal Oxide Thin Film Diodes by Capacitance–Voltage Analysis

Autor: Khong, YJ, Niang, KM, Flewitt, AJ

High quality thin film p-n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has been demon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a656d4d57d68e339342124b35e75dded
https://www.repository.cam.ac.uk/handle/1810/349733

Optimisation of geometric aspect ratio of thin film transistors for low-cost flexible CMOS inverters and its practical implementation

Autor: van Fraassen, NCA, Niang, KM, Parish, JD, Johnson, AL, Flewitt, AJ

Publikováno v: van Fraassen, N C A, Niang, K M, Parish, J D, Johnson, A L & Flewitt, A J 2022, ' Optimisation of geometric aspect ratio of thin film transistors for low-cost flexible CMOS inverters and its practical implementation ', Scientific Reports, vol. 12, no. 1, 16111 . https://doi.org/10.1038/s41598-022-19989-6

A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they can be manu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8f1a8012f5e3b755a54f99b9dfcdb18
https://www.repository.cam.ac.uk/handle/1810/342675

Instability mechanisms in amorphous oxide semiconductors leading to a threshold voltage shift in thin film transistors

Autor: Flewitt, A, Niang, KM

Amorphous indium gallium zinc oxide (a-IGZO) has been successfully employed commercially as the channel layer in thin film transistors (TFTs) for active-matrix flat panel displays. However, these TFTs are known to suffer from a threshold voltage shif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::996c83d0229860a234b7def825ed7489
https://www.repository.cam.ac.uk/handle/1810/265681

Effects of post-deposition vacuum annealing on film characteristics of p-type Cu$_{2}$O and its impact on thin film transistor characteristics

Autor: Han, S, Niang, KM, Rughoobur, G, Flewitt, AJ

Annealing of cuprous oxide (Cu$_{2}$O) thin films in vacuum without phase conversion for subsequent inclusion as the channel layer in p-type thin film transistors (TFTs) has been demonstrated. This is based on a systematic study of vacuum annealing e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ac6b6fa170f61afbefe17d3dbe73de
https://www.repository.cam.ac.uk/handle/1810/261630

Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors

Autor: Salman Alfarisyi, Patryk Golec, Eva Bestelink, Kham M. Niang, Andrew J. Flewitt, S. Ravi P. Silva, Radu A. Sporea

Despite rapidly expanding interest in thin-film source-gated transistors (SGTs), the high temperature dependence of drain current (TDDC) in devices comprising Schottky source barriers is delaying wide adoption. To reduce this effect, alternative sour

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d001a63667be5fee28d9b69bc048cb24