Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Nian-Ke Chen"'
Autor:
Yu-Ting Huang, Zhen-Ze Li, Nian-Ke Chen, Yeliang Wang, Hong-Bo Sun, Shengbai Zhang, Xian-Bin Li
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Charge density wave (CDW) is the phenomenon of a material that undergoes a spontaneous lattice distortion and modulation of the electron density. Typically, the formation of CDW is attributed to Fermi surface nesting or electron-phonon coupl
Externí odkaz:
https://doaj.org/article/dd81d74ab78f4c0f97d410cc8b362507
Autor:
Gao-Da Ye, Ran Ding, Su-Heng Li, Lei Ni, Shu-Ting Dai, Nian-Ke Chen, Yue-Feng Liu, Runda Guo, Lei Wang, Xian-Bin Li, Bin Xu, Jing Feng
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-13 (2024)
Abstract Efficient charge-carrier injection and transport in organic light-emitting devices (OLEDs) are essential to simultaneously achieving their high efficiency and long-term stability. However, the charge-transporting layers (CTLs) deposited by v
Externí odkaz:
https://doaj.org/article/3cb31b43d93c40a8b46e83f6a1d49b25
Autor:
Yu‐Ting Huang, Nian‐Ke Chen, Zhen‐Ze Li, Xue‐Peng Wang, Hong‐Bo Sun, Shengbai Zhang, Xian‐Bin Li
Publikováno v:
InfoMat, Vol 4, Iss 8, Pp n/a-n/a (2022)
Abstract Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroele
Externí odkaz:
https://doaj.org/article/0f882c84977f4d6f948e4dab45d0a950
Publikováno v:
Results in Physics, Vol 31, Iss , Pp 104941- (2021)
Black silicon fabricated by ultrafast laser is a promising material for infrared detection. However, the structure–property relationship in laser-fabricated amorphous Si is still unclear. By first-principles calculations, different distorted local
Externí odkaz:
https://doaj.org/article/91d1f5a2198442bd82fd8ee37b703a83
Publikováno v:
Advanced Science, Vol 8, Iss 13, Pp n/a-n/a (2021)
Abstract One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 n
Externí odkaz:
https://doaj.org/article/01cc4e3f55df4f4c8183542bbf9e1f60
Publikováno v:
Nanotechnology.
The non-volatile resistive switching process of a MoS2 based atomristor with a vertical structure is investigated by first-principles calculations. It is found that the monolayer MoS2 with S vacancy defects (Vs) could maintain an insulation character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::128587d7d541208cfcb004a480e589fe
https://doi.org/10.1088/1361-6528/acb69d
https://doi.org/10.1088/1361-6528/acb69d
Publikováno v:
Zeitschrift für Naturforschung B. 76:537-541
Ultrafast laser-induced phase/structural transitions show a great potential in optical memory and optical computing technologies, which are believed to have advantages of ultrafast speed, low power consumption, less heat diffusion and remote control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f89d9c5402acc00a3eed64ac96acb499
https://doi.org/10.1515/znb-2021-0131
https://doi.org/10.1515/znb-2021-0131
Publikováno v:
Materials Today Nano. 22:100304
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dfe961092f5fbd78c4955f81cb2e5af
https://doi.org/10.1016/j.mtnano.2023.100304
https://doi.org/10.1016/j.mtnano.2023.100304
Publikováno v:
Physical Review B. 105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5167c87d01e57bca730492c9623646ce
https://doi.org/10.1103/physrevb.105.024104
https://doi.org/10.1103/physrevb.105.024104
Publikováno v:
Results in Physics, Vol 31, Iss, Pp 104941-(2021)
Black silicon fabricated by ultrafast laser is a promising material for infrared detection. However, the structure–property relationship in laser-fabricated amorphous Si is still unclear. By first-principles calculations, different distorted local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17f5f9517b57991f26c45a87134a34c6
http://www.sciencedirect.com/science/article/pii/S2211379721009645
http://www.sciencedirect.com/science/article/pii/S2211379721009645