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Publikováno v:
Japanese Journal of Applied Physics. 39:227
Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-Å-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a34bad40b7f9bc44a2b68479bca4bc
https://doi.org/10.1143/jjap.39.227
https://doi.org/10.1143/jjap.39.227
