Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Ni, Zeyuan"'
Autor:
Harashima, Yosuke, Koga, Hiroaki, Ni, Zeyuan, Yonehara, Takehiro, Katouda, Michio, Notake, Akira, Matsui, Hidefumi, Moriya, Tsuyoshi, Si, Mrinal Kanti, Hasunuma, Ryu, Uedono, Akira, Shigeta, Yasuteru
The structural stabilities of the monoclinic and tetragonal phases of Si-doped HfO$_{2}$ at finite temperatures were analyzed using a computational scheme to assess the effects of impurity doping. The finite temperature effects considered in this wor
Externí odkaz:
http://arxiv.org/abs/2303.14891
Autor:
Ni, Zeyuan, Minamitani, Emi, Kawahara, Kazuaki, Arafune, Ryuichi, Lin, Chun-Liang, Takagi, Noriaki, Watanabe, Satoshi
Broken symmetry is the essence of exotic properties in condensed matters. Tungsten ditelluride, WTe$_2$, exceptionally takes a non-centrosymmetric crystal structure in the family of transition metal dichalcogenides, and exhibits novel properties$^{1-
Externí odkaz:
http://arxiv.org/abs/1808.10794
Autor:
Uedono, Akira, Takahashi, Naomichi, Hasunuma, Ryu, Harashima, Yosuke, Shigeta, Yasuteru, Ni, Zeyuan, Matsui, Hidefumi, Notake, Akira, Kubo, Atsushi, Moriya, Tsuyoshi, Michishio, Koji, Oshima, Nagayasu, Ishibashi, Shoji
Publikováno v:
In Thin Solid Films 30 November 2022 762
Akademický článek
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Autor:
Wang, Yangyang, Yang, Ruoxi, Quhe, Ruge, Zhong, Hongxia, Cong, Linxiao, Ye, Meng, Ni, Zeyuan, Song, Zhigang, Yang, Jinbo, Shi, Junjie, Li, Ju, Lu, Jing
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag,
Externí odkaz:
http://arxiv.org/abs/1508.00300
Autor:
Pan, Feng, Wang, Yangyang, Jiang, Kaili, Ni, Zeyuan, Ma, Jianhua, Zheng, Jiaxin, Quhe, Ruge, Shi, Junjie, Yang, Jinbo, Chen, Changle, Lu, Jing
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of
Externí odkaz:
http://arxiv.org/abs/1501.01911
Autor:
Zhong, Hongxia, Ni, Zeyuan, Wang, Yangyang, Ye, Meng, Song, Zhigang, Pan, Yuanyuan, Quhe, Ruge, Yang, Jinbo, Yang, Li, Shi, Junjie, Lu, Jing
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive
Externí odkaz:
http://arxiv.org/abs/1501.01071
Autor:
Pan, Yuanyuan, Wang, Yangyang, Wang, Lu, Zhong, Hongxia, Quhe, Ruge, Ni, Zeyuan, Ye, Meng, Mei, Wai-Ning, Shi, Junjie, Guo, Wanlin, Yang, Jinbo, Lu, Jing
Publikováno v:
Nanoscale, 2015,7, 2116-2127
Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we systematically studied for the first time the interfacial properties of
Externí odkaz:
http://arxiv.org/abs/1408.3480
Autor:
Wang, Yangyang, Ni, Zeyuan, Liu, Qihang, Quhe, Ruge, Zheng, Jiaxin, Ye, Meng, Yu, Dapeng, Shi, Junjie, Yang, Jinbo, Lu, Jing
Publikováno v:
Adv. Funct. Mater., 25, 68-77, 2015
It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio
Externí odkaz:
http://arxiv.org/abs/1408.1830
Autor:
Quhe, Ruge, Yuan, Yakun, Zheng, Jiaxin, Wang, Yangyang, Ni, Zeyuan, Shi, Junjie, Yu, Dapeng, Yang, Jinbo, Lu, Jing
Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir, Cu, Mg, Au, Pt, Al, and Ag substrates. The d
Externí odkaz:
http://arxiv.org/abs/1405.6186