Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nhu-Quynh Diep"'
Autor:
Cheng-Wei Liu, Jin-Ji Dai, Ssu-Kuan Wu, Nhu-Quynh Diep, Sa-Hoang Huynh, Thi-Thu Mai, Hua-Chiang Wen, Chi-Tsu Yuan, Wu-Ching Chou, Ji-Lin Shen, Huy-Hoang Luc
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Abstract Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of
Externí odkaz:
https://doaj.org/article/ab219f9fc0b54390a040ed381c155c46
Autor:
Umeshwar Reddy Nallasani, Ssu-Kuan Wu, Nhu Quynh Diep, Yen-Yu Lin, Hua-Chiang Wen, Wu-Ching Chou, Chin-Hau Chia
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3 has unveiled impressive opportunities for exploring novel physics and device concepts. This study presents the epitaxial growth of 2D β-In2Se3/3D β-Ga2O3 heteros
Externí odkaz:
https://doaj.org/article/e1b52208df0044028f3717821fc8d8db
Autor:
Nhu Quynh Diep, Yu Xun Chen, Duc Loc Nguyen, My Ngoc Duong, Ssu Kuan Wu, Cheng Wei Liu, Hua Chiang Wen, Wu Ching Chou, Jenh Yih Juang, Yao Jane Hsu, Van Qui Le, Ying Hao Chu, Sa Hoang Huynh
Publikováno v:
Journal of Materials Chemistry C. 11:1772-1781
This work reports molecular beam epitaxy of two-dimensional GaSe1−xTex ternary alloys that have recently attracted a lot of interest in physics and material sciences even though facing crucial challenges in their epitaxial technology.
Autor:
Nhu Quynh Diep, Van Qui Le, Duc Loc Nguyen, Tan Vinh Le, Ssu Kuan Wu, Wu Ching Chou, Hua Chiang Wen, Cheng Wei Liu, Thanh Tra Vu, Sa Hoang Huynh
Publikováno v:
ACS Applied Nano Materials. 4:8913-8921
Akademický článek
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Akademický článek
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Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports
Scientific Reports
Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layer
Autor:
NHU QUYNH DIEP, 葉如瓊
107
Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this
Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9x626m
Akademický článek
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Publikováno v:
Renewable Energy. 74:456-463
This study is to evaluate the potential for development of a cellulosic ethanol facility in Vietnam. Rice straw is abundant in Vietnam and highly concentrated in the Mekong Delta, where about 26 Mt year −1 of rice straw has been yearly produced. To