Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nhu Quynh Diep"'
Autor:
Umeshwar Reddy Nallasani, Ssu-Kuan Wu, Nhu Quynh Diep, Yen-Yu Lin, Hua-Chiang Wen, Wu-Ching Chou, Chin-Hau Chia
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3 has unveiled impressive opportunities for exploring novel physics and device concepts. This study presents the epitaxial growth of 2D β-In2Se3/3D β-Ga2O3 heteros
Externí odkaz:
https://doaj.org/article/e1b52208df0044028f3717821fc8d8db
Autor:
Nhu Quynh Diep, Ssu Kuan Wu, Cheng Wei Liu, Sa Hoang Huynh, Wu Ching Chou, Chih Ming Lin, Dong Zhou Zhang, Ching Hwa Ho
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angl
Externí odkaz:
https://doaj.org/article/e8482ebcdc4441faa49b76323c183062
Autor:
NHU QUYNH DIEP, 葉如瓊
107
Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this
Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9x626m
Autor:
Nhu Quynh Diep, Yu Xun Chen, Duc Loc Nguyen, My Ngoc Duong, Ssu Kuan Wu, Cheng Wei Liu, Hua Chiang Wen, Wu Ching Chou, Jenh Yih Juang, Yao Jane Hsu, Van Qui Le, Ying Hao Chu, Sa Hoang Huynh
Publikováno v:
Journal of Materials Chemistry C. 11:1772-1781
This work reports molecular beam epitaxy of two-dimensional GaSe1−xTex ternary alloys that have recently attracted a lot of interest in physics and material sciences even though facing crucial challenges in their epitaxial technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9adf026f8eec8a18e9818f81e18eb2
https://doi.org/10.1039/d2tc04252e
https://doi.org/10.1039/d2tc04252e
Autor:
Nhu Quynh Diep, Van Qui Le, Duc Loc Nguyen, Tan Vinh Le, Ssu Kuan Wu, Wu Ching Chou, Hua Chiang Wen, Cheng Wei Liu, Thanh Tra Vu, Sa Hoang Huynh
Publikováno v:
ACS Applied Nano Materials. 4:8913-8921
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85e83e8d05ca3587908053f26acd9a41
https://doi.org/10.1021/acsanm.1c01544
https://doi.org/10.1021/acsanm.1c01544
Akademický článek
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Autor:
Cheng Wei Liu, Sa Hoang Huynh, Huy Hoang Luc, Chi-Tsu Yuan, Thi Thu Mai, Nhu Quynh Diep, Wu-Ching Chou, Ssu Kuan Wu, Jin Ji Dai, Ji-Lin Shen, Hua Chiang Wen
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports
Scientific Reports
Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c8abaf6bd903d1232dfca326b34b79a
https://doi.org/10.1038/s41598-020-69946-4
https://doi.org/10.1038/s41598-020-69946-4
Akademický článek
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Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports
Scientific Reports
Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9351e046c5f863fb4c272653fe3ff38
https://doi.org/10.1038/s41598-019-54406-5
https://doi.org/10.1038/s41598-019-54406-5
Akademický článek
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