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pro vyhledávání: '"Nguyen Essex Junction Van"'
Publikováno v:
SPIE Proceedings.
A plasma-enhanced chemically vapor deposited (PECVD) silicon oxynitride (Si-O-N) was used in a 3-layer resist system in combination with a 0.42 na lens to provide device process developers with a means for extending photolithography down to 0.5 pm fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737997d85375660dd47cb1a2b1f7acd4
https://doi.org/10.1117/12.947819
https://doi.org/10.1117/12.947819
