Zobrazeno 1 - 10
of 214
pro vyhledávání: '"Nguyễn Việt Hùng"'
Publikováno v:
Journal of Computational Electronics (2023)
The Green's function method is recognized to be a very powerful tool for modelling quantum transport in nanoscale electronic devices. As atomistic calculations are generally expensive, numerical methods and related algorithms have been developed acco
Externí odkaz:
http://arxiv.org/abs/2405.14288
Autor:
Canetta, Alessandra, Gonzalez-Munoz, Sergio, Nguyen, Viet-Hung, Agarwal, Khushboo, de Picquendaele, Pauline de Crombrugghe, Hong, Yuanzhuo, Mohapatra, Sambit, Watanabe, Kenji, Taniguchi, Takashi, Nysten, Bernard, Hackens, Benoît, Ribeiro-Palau, Rebeca, Charlier, Jean-Christophe, Kolosov, Oleg, Spièce, Jean, Gehring, Pascal
Publikováno v:
Nanoscale, 2023,15, 8134-8140
Nanomechanical measurements of minimally twisted van der Waals materials remained elusive despite their fundamental importance for device realisation. Here, we use Ultrasonic Force Microscopy (UFM) to locally quantify the variation of out-of-plane Yo
Externí odkaz:
http://arxiv.org/abs/2405.12610
Graphene has been widely studied for various applications due to its outstanding electrical and mechanical properties. However, its potential in thermoelectric applications has been limited by a low Seebeck coefficient and high thermal conductivity.
Externí odkaz:
http://arxiv.org/abs/2404.02307
Autor:
Galvani, Thomas, Hamze, Ali K., Caputo, Laura, Kaya, Onurcan, Dubois, Simon, Colombo, Luigi, Nguyen, Viet-Hung, Shin, Yongwoo, Shin, Hyeon-Jin, Charlier, Jean-Christophe, Roche, Stephan
We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the periodic cell) s
Externí odkaz:
http://arxiv.org/abs/2403.11924
Autor:
Guerrero, Pedro Alcázar, Nguyen, Viet-Hung, Romeral, Jorge Martínez, Cummings, Aron W., Garcia, José-Hugo, Charlier, Jean-Christophe, Roche, Stephan
Flat bands in moir\'e systems are exciting new playgrounds for the generation and study of exotic many-body physics phenomena in low-dimensional materials. Such physics is attributed to the vanishing kinetic energy and strong spatial localization of
Externí odkaz:
http://arxiv.org/abs/2401.08265
Publikováno v:
2D Materials (2024)
Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene
Externí odkaz:
http://arxiv.org/abs/2311.08938
Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom co-doping (i
Externí odkaz:
http://arxiv.org/abs/2210.14715
Publikováno v:
In Chemical Engineering Research and Design December 2024 212:293-306
Publikováno v:
In Knowledge-Based Systems 9 October 2024 301
Autor:
Cinar, Mustafa Neset, Antidormi, Aleandro, Nguyen, Viet-Hung, Kovtun, Alessandro, Avila, Samuel Lara, Liscio, Andrea, Charlier, Jean-Christophe, Roche, Stephan, Sevincli, Haldun
In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources o
Externí odkaz:
http://arxiv.org/abs/2201.13437