Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ngoc V. Le"'
Autor:
Ngoc V. Le, William J. Dauksher, Pawitter J. S. Mangat, Jeffrey H. Baker, K. Gehoski, Kevin J. Nordquist, Diana Convey, S. R. Young, Eric S. Ainley
Publikováno v:
Microelectronic Engineering. 83:929-932
Nano-imprint lithography is attracting attention as a low cost method for printing nanometer-scale geometries and has obtained placement on the International Technology Roadmap for Semiconductors as a potential lithography solution at the 32 and 22nm
Autor:
Ngoc V. Le, William J. Dauksher, Kevin J. Nordquist, Eric S. Ainley, Pawitter J. S. Mangat, K. Gehoski
Publikováno v:
Microelectronic Engineering. 83:839-842
Recent advancements made in step and flash imprint lithography (S-FIL) have enhanced the attractiveness of nanoimprint technology for sub-100nm resolution. Improvements in the area of material dispensing and refinement of the etch barrier itself have
Autor:
S. Johnson, Douglas J. Resnick, William J. Dauksher, K. Gehoski, Ngoc V. Le, Grant Willson, A. E. Hooper
Publikováno v:
Microelectronic Engineering. :464-473
In order for Step and Flash Imprint Lithography (S-FIL) to be considered a viable printing technology to produce sub-100nm geometries, a reliable pattern transfer etch process needs to be established. Unlike optical lithography processes, imprinting
Publikováno v:
SPIE Proceedings.
For the first time, electrically testable snake and comb structures were used to quantitatively characterize the defectivity associated with imprint lithography, specifically with Step and Flash Imprint Lithography. Whereas the overall yield for quar
Publikováno v:
SPIE Proceedings.
In this paper we describe a method of fabricating a Fabry-Perot filter array consisting of four distinct wavelengths using a stopping layer, which in turn is discriminately measured. Precise control of the oxide thickness is demonstrated by using ref
Autor:
William J. Dauksher, Eric S. Ainley, Kevin J. Nordquist, Pawitter J. S. Mangat, K. Gehoski, Ngoc V. Le
Publikováno v:
SPIE Proceedings.
Nano-imprint technology has demonstrated the potential for a low-cost, high-throughput Next Generation Lithography (NGL) method extendable to ultra-fine geometry requirements. Although the development of nano-imprinting lithography has been focused o
Autor:
Laura Dues, Jeffrey H. Baker, D. J. Resnick, William J. Dauksher, Kathleen A. Gehoski, Ngoc V. Le
Publikováno v:
SPIE Proceedings.
Along with other Next Generation Lithography (NGL) methods, imprint lithography has been included on the International Roadmap for Semiconductors (ITRS) for the 32 nm node, predicted to be production-ready by 20131. Step and Flash Imprint Lithography
Autor:
David P. Mancini, Douglas J. Resnick, Ngoc V. Le, Kevin J. Nordquist, S. R. Young, William J. Dauksher, Kathleen A. Gehoski
Publikováno v:
SPIE Proceedings.
Recently, the International Roadmap for Semiconductors (ITRS) has included imprint lithography on its roadmap, to be ready for production use in 2013 at the 32 nm node. Step and Flash Imprint Lithography (S-FIL TM ) is one of the promising new method
Autor:
Ronald Bozak, David P. Mancini, D. J. Resnick, William J. Dauksher, David Lee, Roy White, L. Casoose, Jeffrey E. Csuy, Kevin J. Nordquist, K. Gehoski, Ngoc V. Le
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3306
In order for step and flash imprint lithography (S-FIL) to become a truly viable manufacturing technology, infrastructure including template repair must be commercially available. Extensive template repair studies were undertaken using RAVE’s nm 65
Autor:
William J. Dauksher, David P. Mancini, D. J. Resnick, R. W. Brocato, Jack L. Skinner, A. Alec Talin, Ngoc V. Le, K. Gehoski, D. W. Palmer, Gregory Frank Cardinale, Kevin J. Nordquist
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:3265
We report the surface acoustic wave (SAW) correlator devices fabricated using nanoimprint lithography. Using step-and-flash imprint lithography (S-FIL), we produced SAW correlator devices on 100mm diameter z-cut LiNbO3 devices and an aluminum metal e