Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nghia Van Phan"'
Autor:
Nghia Van Phan
Cardiovascular disease (CVD) is the number one cause of death in the United States and among the leading causes of mortality globally. Several studies have suggested that CVD risk can be predicted by an increase in aortic wave reflection. Thus, asses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dea0699a06d5419c1b9022168653ce7
Autor:
Melanie J. Sherony, M. Rivier, P. O'Neil, Yue Tan, Asit Kumar Ray, Mohamed Talbi, Lawrence F. Wagner, N. E. Lustig, Kun Wu, Jean-Olivier Plouchart, Daniel R. Knebel, David M. Friend, Keith A. Jenkins, Shreesh Narasimha, Noah Zamdmer, Jae-Joon Kim, Seong-Dong Kim, M. Rohn, J. Strom, Nghia Van Phan, Stephen V. Kosonocky
Publikováno v:
IBM Journal of Research and Development. 47:611-629
Systems-on-chips (SoCs) that combine digital and high-speed communication circuits present new opportunities for power-saving designs. This results from both the large number of system specifications that can be traded off to minimize overall power a
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1430-1435
A 64 b PowerPC RISC microprocessor is incorporated in a 0.2 /spl mu/m CMOS technology with copper interconnects and multi-threshold transistors and next into a silicon-on-insulator (SOI) version of the same technology. Some architectural changes impr
Autor:
Salvatore N. Storino, J.D. Strom, Nghia Van Phan, T.C. Buchholtz, G. Aipperspach, Dennis Thomas Cox, R.R. Williams
Publikováno v:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
The 64b PowerPC RISC microprocessor previously described is migrated from a 0.22 /spl mu/m SOI technology to a 0.18 /spl mu/m SOI technology. Key features of the 0.77 scaled 1.5 V technology are 0.08 /spl mu/m NFET channel lengths, 7 layer Cu metalli