Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Ngerich"'
Autor:
Klar, P. J., Teubert, J., Gu, M., Ngerich, Niebling, T., Gru, H., Ning, Heimbrodt, W., Volz, K., Stolz, W., Polimeni, Antonio, Capizzi, Mario, O'Reilly, E. P., Lindsay, A., Galluppi, M., Geelhaar, L., Riechert, H., Tomic, S.
GaN x As 1-x and Ga 1-y In y N x As 1-x are the most prominent members of a novel class of non-amalgamation type semiconductor alloys where a fraction x of the anions of the host (e.g., GaAs or Ga 1-y In y As) is replaced by N isovalent impurity atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49c1a1032b3468fad80e84457fe555e1
http://hdl.handle.net/11573/235683
http://hdl.handle.net/11573/235683
