Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon.

Autor: Lim ZH; Department of Physics, University of Texas-Arlington, Arlington, Texas 76019, USA., Quackenbush NF; Material Measurement Laboratory, Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA., Penn AN; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA., Chrysler M; Department of Physics, University of Texas-Arlington, Arlington, Texas 76019, USA., Bowden M; Environmental Molecular Sciences Laboratory Pacific Northwest National Laboratory, Richland, Washington 99352, USA., Zhu Z; Environmental Molecular Sciences Laboratory Pacific Northwest National Laboratory, Richland, Washington 99352, USA., Ablett JM; Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France., Lee TL; Diamond Light Source, Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom., LeBeau JM; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA., Woicik JC; Material Measurement Laboratory, Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA., Sushko PV; Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA., Chambers SA; Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA., Ngai JH; Department of Physics, University of Texas-Arlington, Arlington, Texas 76019, USA.

Publikováno v: Physical review letters [Phys Rev Lett] 2019 Jul 12; Vol. 123 (2), pp. 026805.

Engineered Unique Elastic Modes at a BaTiO_{3}/(2×1)-Ge(001) Interface.

Autor: Kumah DP; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA., Dogan M; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA., Ngai JH; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA., Qiu D; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA., Zhang Z; Argonne National Laboratory, Advanced Photon Source, Argonne, Illinois 60439, USA., Su D; Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, USA., Specht ED; Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA., Ismail-Beigi S; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA., Ahn CH; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA., Walker FJ; Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06520, USA.

Publikováno v: Physical review letters [Phys Rev Lett] 2016 Mar 11; Vol. 116 (10), pp. 106101. Date of Electronic Publication: 2016 Mar 07.

Linear Conductance Modulation in Aluminum Doped Resistive Switching Memories for Neuromorphic Computing.

Autor: Song, Young-Woong, Lee, Junseo, Lee, Sein, Ham, Wooho, Yoon, Jeong Hyun, Park, Jeong-Min, Sung, Taehoon, Kwon, Jang-Yeon

Publikováno v: Electronic Materials Letters; Nov2024, Vol. 20 Issue 6, p725-732, 8p

Active silicon integrated nanophotonics: ferroelectric BaTiO₃ devices.

Autor: Xiong C; Department of Electrical Engineering, ‡Department of Applied Physics, and §Department of Mechanical Engineering and Materials Sciences, Yale University , New Haven, Connecticut 06511, United States., Pernice WH, Ngai JH, Reiner JW, Kumah D, Walker FJ, Ahn CH, Tang HX

Publikováno v: Nano letters [Nano Lett] 2014 Mar 12; Vol. 14 (3), pp. 1419-25. Date of Electronic Publication: 2014 Feb 04.

Calculation of intersubband absorption in n-doped BaSnO3 quantum wells.

Autor: Stanojević, Novak¹ (AUTHOR) novakstanojevic1@gmail.com, Vuković, Nikola^1,2 (AUTHOR), Radovanović, Jelena^1,2 (AUTHOR)

Publikováno v: Optical & Quantum Electronics. Apr2023, Vol. 55 Issue 4, p1-10. 10p.