Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Ngai, J H"'
Autor:
Chrysler, M., Gabel, J., Lee, T. -L., Zhu, Z., Kaspar, T. C., Sushko, P. V., Chambers, S. A., Ngai, J. H.
Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si an
Externí odkaz:
http://arxiv.org/abs/2303.14323
Autor:
Chrysler, M., Gabel, J., Lee, T. -L., Penn, A. N., Matthews, B. E., Kepaptsoglou, D. M., Ramasse, Q. M., Paudel, J. R., Sah, R. K., Grassi, J. D., Zhu, Z., Gray, A. X., LeBeau, J. M., Spurgeon, S. R., Chambers, S. A., Sushko, P. V., Ngai, J. H.
Publikováno v:
Phys. Rev. Materials 5, 104603 (2021)
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create
Externí odkaz:
http://arxiv.org/abs/2105.13443
Autor:
Ahmadi-Majlan, K., Zhang, H., Shen, X., Moghadam, M. J., Chrysler, M., Conlin, P., Hensley, R., Su, D., Wei, J. Y. T., Ngai, J. H.
Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{\delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using ox
Externí odkaz:
http://arxiv.org/abs/1710.08600
Akademický článek
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Autor:
Moghadam, J., Ahmadi-Majlan, K., Shen, X., Droubay, T., Bowden, M., Chrysler, M., Su, D., Chambers, S. A., Ngai, J. H.
The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlli
Externí odkaz:
http://arxiv.org/abs/1410.7327
We present electrical transport measurements of heterostructures comprised of BaTiO$_3$ and Ba$_{1-x}$Sr$_x$TiO$_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO$_3$, which enables the thermal expansion mismatch bet
Externí odkaz:
http://arxiv.org/abs/1311.3281
Autor:
Kirtley, J. R., Kalisky, B., Bert, J. A., Bell, C., Hikita, Y., Hwang, H. Y., Ngai, J. H., Segal, Y., Walker, F. J., Ahn, C. H., Moler, K. A.
Scanning SQUID susceptometry images the local magnetization and susceptibility of a sample. By accurately modeling the SQUID signal we can determine the physical properties such as the penetration depth and permeability of superconducting samples. We
Externí odkaz:
http://arxiv.org/abs/1204.3355
We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater effect on the
Externí odkaz:
http://arxiv.org/abs/0909.2834
Scanning tunneling spectroscopy was performed on (110)-oriented thin films of Ca-overdoped Y$_{0.95}$Ca$_{0.05}$Ba$_2$Cu$_3$O$_{7-\delta}$ at 4.2K, to probe the local evolution of Andreev$-$Saint-James surface states in a c-axis magnetic field. In ze
Externí odkaz:
http://arxiv.org/abs/0904.2896
Scanning tunneling spectroscopy was performed on c-axis Y{1-x}Ca{x}Ba2Cu3O{7-delta} thin films for x= 0, 0.05, 0.15 and 0.20 at 4.2K. The measured spectra show main-gap, sub-gap and satellite features which scale similarly in energy versus Ca-doping,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703423