Zobrazeno 1 - 10
of 532
pro vyhledávání: '"Ng Tien Khee"'
Autor:
Zhou, Jie, Zhang, Qiming, Gong, Jiarui, Lu, Yi, Liu, Yang, Abbasi, Haris, Qiu, Haining, Kim, Jisoo, Lin, Wei, Kim, Donghyeok, Li, Yiran, Ng, Tien Khee, Jang, Hokyung, Liu, Dong, Wang, Haiyan, Ooi, Boon S., Ma, Zhenqiang
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor
Externí odkaz:
http://arxiv.org/abs/2411.09713
Autor:
Shen, Chao, Zhan, Wenkang, Pan, Shujie, Hao, Hongyue, Zhuo, Ning, Xin, Kaiyao, Cong, Hui, Xu, Chi, Xu, Bo, Ng, Tien Khee, Chen, Siming, Xue, Chunlai, Liu, Fengqi, Wang, Zhanguo, Zhao, Chao
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate
Externí odkaz:
http://arxiv.org/abs/2411.00332
Autor:
Zhou, Jie, Wang, Yifan, Yao, Ziqian, Wang, Qingxiao, Banda, Yara S., Gong, Jiarui, Liu, Yang, Adamo, Carolina, Marshall, Patrick, Lu, Yi, Tsai, Tsung-Han, Li, Yiran, Gambin, Vincent, Ng, Tien Khee, Ooi, Boon S., Ma, Zhenqiang
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crysta
Externí odkaz:
http://arxiv.org/abs/2409.15789
Autor:
Hu Fangchen, Holguin-Lerma Jorge A., Mao Yuan, Zou Peng, Shen Chao, Ng Tien Khee, Ooi Boon S., Chi Nan
Publikováno v:
Opto-Electronic Advances, Vol 3, Iss 8, Pp 200009-1-200009-11 (2020)
Visible-light communication (VLC) stands as a promising component of the future communication network by providing high-capacity, low-latency, and high-security wireless communication. Superluminescent diode (SLD) is proposed as a new light emitter i
Externí odkaz:
https://doaj.org/article/aa8c947510b24f89bcc10ccf32d0f38d
Autor:
Gong, Jiarui, Zhou, Jie, Dheenan, Ashok, Sheikhi, Moheb, Alema, Fikadu, Ng, Tien Khee, Pasayat, Shubhra S., Gan, Qiaoqiang, Osinsky, Andrei, Gambin, Vincent, Gupta, Chirag, Rajan, Siddharth, Ooi, Boon S., Ma, Zhenqiang
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the develo
Externí odkaz:
http://arxiv.org/abs/2312.00771
Autor:
Zhou, Jie, Sheikhi, Moheb, Dheenan, Ashok, Abbasi, Haris, Gong, Jiarui, Liu, Yang, Adamo, Carolina, Marshall, Patrick, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Ng, Tien Khee, Gan, Qiaoqiang, Gambin, Vincent, Ooi, Boon S., Rajan, Siddharth, Ma, Zhenqiang
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-typ
Externí odkaz:
http://arxiv.org/abs/2310.03886
Autor:
Zhou, Jie, Dheenan, Ashok, Gong, Jiarui, Adamo, Carolina, Marshall, Patrick, Sheikhi, Moheb, Tsai, Tsung-Han, Wriedt, Nathan, Cheung, Clincy, Qiu, Shuoyang, Ng, Tien Khee, Gan, Qiaoqiang, Vincent, Gambin, Ooi, Boon S., Rajan, Siddharth, Ma, Zhenqiang
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate mo
Externí odkaz:
http://arxiv.org/abs/2308.06575
Autor:
Gong, Jiarui, Kim, Donghyeok, Jang, Hokyung, Alema, Fikadu, Wang, Qingxiao, Ng, Tien Khee, Qiu, Shuoyang, Zhou, Jie, Su, Xin, Lin, Qinchen, Singh, Ranveer, Abbasi, Haris, Chabak, Kelson, Jessen, Gregg, Cheung, Clincy, Gambin, Vincent, Pasayat, Shubhra S., Osinsky, Andrei, Boon, Ooi, S., Gupta, Chirag, Ma, Zhenqiang
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered th
Externí odkaz:
http://arxiv.org/abs/2305.19138
Autor:
Gnanasekar, Paulraj, Peramaiy, Karthik, Zhang, Huafan, Ng, Tien Khee, Huang, Kuo-Wei, Kulandaivel, Jeganathan, Ooi, Boon S.
Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst
Externí odkaz:
http://arxiv.org/abs/2205.13453
Autor:
Gong, Jiarui, Zhou, Jie, Dheenan, Ashok, Sheikhi, Moheb, Alema, Fikadu, Ng, Tien Khee, Pasayat, Shubhra S., Gan, Qiaoqiang, Osinsky, Andrei, Gambin, Vincent, Gupta, Chirag, Rajan, Siddharth, Ooi, Boon S., Ma, Zhenqiang
Publikováno v:
In Applied Surface Science 15 May 2024 655