Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Newns, D. M"'
Autor:
Solomon, P. M., Bryce, B. A., Kuroda, M. A., Keech, R., Shett, S., Shaw, T. M., Copel, M., Hung, L. -W., Schrott, A. G., Armstrong, C., Gordon, M. S., Reuter, K. B., Theis, T. N., Haensch, W., Rossnagel, S. M., Miyazoe, H., Elmegreen, B. G., Liu, X. -H., Trolier-McKinstry, S., Martyna, G. J, Newns, D. M.
The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the swit
Externí odkaz:
http://arxiv.org/abs/1503.07467
Understanding the origin of the pseudogap is an essential step towards elucidating the pairing mechanism in the cuprate superconductors. Recently there has been strong experimental evidence showing that C4 symmetry breaking occurs on formation of the
Externí odkaz:
http://arxiv.org/abs/1006.3535
Giant Nonlinear Electron-lattice Interaction in Cuprate Superconductors, and Origin of the Pseudogap
The pseudogap is a key property of the cuprate superconductors, whose understanding should illuminate the pairing mechanism. Recent experimental data support a close connection between the pseudogap and an oxygen-driven C4 symmetry breaking within th
Externí odkaz:
http://arxiv.org/abs/0902.3015
Autor:
Newns, D. M., Tsuei, C. C.
Twenty years of extensive research has yet to produce a general consensus on the origin of high temperature superconductivity (HTS). However, several generic characteristics of the cuprate superconductors have emerged as the essential ingredients of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606223
We implement a Quantum Monte Carlo calculation for a repulsive Hubbard model with nearest and next-nearest neighbor hopping interactions on clusters up to 12x12. A parameter region where the Fermi level lies close to the van Hove singularity at the S
Externí odkaz:
http://arxiv.org/abs/cond-mat/9608030
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' imp
Externí odkaz:
http://arxiv.org/abs/cond-mat/9606157
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 1, p014104-1-014104-13, 13p
Autor:
Newns, D. M.1 dennisn@us.ibm.com, Tsuei, C. C.
Publikováno v:
Nature Physics. Mar2007, Vol. 3 Issue 3, p184-191. 8p. 3 Diagrams, 3 Graphs.
Publikováno v:
Nature. 10/7/2004, Vol. 431 Issue 7009, p672-676. 5p.
Publikováno v:
Journal of Chemical Physics; 8/15/1988, Vol. 89 Issue 4, p2388, 9p