Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Nevran Ozguven"'
Publikováno v:
Journal of Applied Physics. 94:1557-1564
We investigate numerical simulations that utilize a nonlinear interdiffusion solver and dynamical x-ray diffraction calculations to predict the local composition evolution in low Ge concentration Si/SiGe superlattices and their diffraction patterns d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5abfc9d7280966d47eefcb3cc1ac4e4
https://doi.org/10.1063/1.1589600
https://doi.org/10.1063/1.1589600
Autor:
J. O. Chu, D. B. Aubertine, Ann F. Marshall, M. A. Mander, Nevran Ozguven, Paul C. McIntyre, P. M. Mooney
Publikováno v:
Journal of Applied Physics. 92:5027-5035
X-ray diffraction is used to probe interdiffusion in asymmetrically strained, low concentration Si/SiGe superlattices. The results are shown to be in good agreement with a model developed from literature data for Ge diffusion in SiGe alloys. Using th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c30133792afbf6e94f6b064196e87693
https://doi.org/10.1063/1.1508424
https://doi.org/10.1063/1.1508424
Autor:
Ali Kemal Okyay, Nevran Ozguven, Krishna C. Saraswat, Paul C. McIntyre, Ammar Nayfeh, Ann F. Marshall, Takao Yonehara
Publikováno v:
2006 IEEE LEOS Annual Meeting Conference Proceedings.
Germanium-on-silicon photodetectors with responsivities as high as 0.85 A/W at 1550 nm that exhibit dark currents of 100 mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ca427e6e035694cc9aaca10713aee4
https://doi.org/10.1109/leos.2006.279214
https://doi.org/10.1109/leos.2006.279214
Autor:
Paul C. McIntyre, Nevran Ozguven
Publikováno v:
Applied Physics Letters. 92:181907
We report on multilayer x-ray reflectivity measurements of the Si–Ge interdiffusivity in epitaxial SixGe1−x∕SiyGe1−y superlattices that have an average Ge composition of 91at.%. The extracted activation enthalpy (3.20±0.2eV) is substantially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d81d868cb0c6850752d24276d064a9e
https://doi.org/10.1063/1.2917798
https://doi.org/10.1063/1.2917798
Autor:
Nevran Ozguven, Paul C. McIntyre
Publikováno v:
Electrochemical and Solid-State Letters. 11:H138
We report on the effects of oxidation of a Si 1-x Ge x film deposited onto a thin silicon-on-insulator (SOI) (100) substrate on the strain state and crystalline perfection of the resulting high-Ge content layers. During oxidation, Si atoms were selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788bae772455904ef461feb00eba04ea
https://doi.org/10.1149/1.2896080
https://doi.org/10.1149/1.2896080
Autor:
Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Nevran Ozguven, Ann Marshall, Paul C. McIntyre, Takao Yonehara
Publikováno v:
LEOS 2006 - 19th Annual Meeting of the IEEE Lasers & Electro-Optics Society; 2006, p460-461, 2p