Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Nevine Rochat"'
Autor:
Vincent Bocquet, Raphaël Cabal, Mickaël Albaric, Nevine Rochat, Raphaël Ramos, Jean-Paul Barnes, Sébastien Dubois
Publikováno v:
SiliconPV Conference Proceedings, Vol 1 (2024)
The hydrogenation step contributing to the high efficiencies (>25%) reached with poly-Si/SiOx passivated contacts solar cells is still poorly understood. In this study, Fourier transform infrared spectroscopy (FTIR) is used to follow the different bo
Externí odkaz:
https://doaj.org/article/a0d32333bb0745539e82a51d68cc379b
Autor:
Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, Julien Garrione, Lucie Prazakova, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, Simon Martin, Chiara Sabbione, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, Abdelkader Souifi, Francois Andrieu, Gabriele Navarro
Publikováno v:
IEEE Transactions on Electron Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3db138f27cecd4f37e3ce99ddea1996
Publikováno v:
ECS Transactions. 69:177-183
Gate oxide patterning during integrated circuits manufacturing is defined by a photolithography – etch sequence. Wet etchants are still preferred to plasma to keep smooth transistors channel. With the transistor nodes evolution, not only the latera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9c456d2bfe3a5c2930b69cdc757ba89
https://doi.org/10.1149/06908.0177ecst
https://doi.org/10.1149/06908.0177ecst
Publikováno v:
ECS Transactions. 18:275-280
Multiple Internal Reflection (MIR) FTIR is used to assess the impact of potentially damaging BEOL integration process steps such as Chemical Mechanical Polishing (CMP) and NH3-based plasmas on a k=2.55 porous interlayer dielectric. The NH3 plasma is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47c768d88b1e339ee7f07470ff96ee1
https://doi.org/10.1149/1.3096462
https://doi.org/10.1149/1.3096462
Autor:
Virginie Brizé, Bernhard Holländer, Nevine Rochat, Benjamin J. Feist, Catherine Dubourdieu, Frédéric Terrenoir, Nicolas Blasco, Igor Matko
Publikováno v:
ECS Transactions. 13:157-162
Hf-Sc-O thin films were deposited at 500{degree sign}C on p-type Si(100)/SiO2 substrates by metal organic chemical vapour deposition. Hf(OtBu)2(mmp)2 and Sc(3mod)3 were used as precursors. The mixture of the precursors in a same solution leads to a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f26e188ed97349acf8477228310d8a8
https://doi.org/10.1149/1.2911495
https://doi.org/10.1149/1.2911495
Publikováno v:
Microelectronics Reliability. 47:764-768
The impact of electron irradiation on ultra-low K (ULK) porous dielectric material used in advanced interconnects is analyzed using spectroscopic and electrical characterizations. The e-beam irradiation modifies the chemical composition, the porosity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459f80c0b470d08f83e3593056a0e2df
https://doi.org/10.1016/j.microrel.2007.01.026
https://doi.org/10.1016/j.microrel.2007.01.026
Autor:
Erwan Rauwel, Vincent Cosnier, Catherine Dubourdieu, Simon A. Rushworth, F. Ducroquet, Patrick Chaudouët, Cyril Millon, Nevine Rochat
Publikováno v:
Chemical Vapor Deposition. 12:187-192
Thin films of HfO 2 were deposited on (100)Si/SiO 2 by liquid-injection metal-organic (MO)CVD using [Hf(O t Bu) 2 (mmp) 2 ) dissolved in octane as the precursor. A precise thickness control on the nanometer scale was obtained by controlling the volum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b18ad9adcab6b95031a7f17e1d6341
https://doi.org/10.1002/cvde.200506397
https://doi.org/10.1002/cvde.200506397
Autor:
Maxime Argoud, Christophe Aumont, Perceval Coudrain, Lionel Vignoud, P. Chausse, Yorick Trouiller, Magalie Gasiglia, Claire Sourd, Nevine Rochat, Helene Issele, Nacima Allouti, Christophe Poulain
Publikováno v:
2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013).
When considering wafer level packaging (WLP) applications, the use of dielectric polymer materials becomes more relevant for reliability performance. Indeed, polymer materials can have excellent dielectric performances with a processability at lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38946f59d2e12df8c4fcda6556a69dc8
https://doi.org/10.1109/eptc.2013.6745677
https://doi.org/10.1109/eptc.2013.6745677
Autor:
Dina H. Triyoso, Rama I. Hegde, Rich Gregory, Nevine Rochat, David C. Gilmer, S. Samavedam, James K. Schaeffer, Vidya Kaushik
Publikováno v:
MRS Proceedings. 996
In this paper, various approaches to extend scalability of Hafnium-based dielectrics are reported. Among the three crystal phases of HfO2 (monoclinic, cubic and tetragonal), the tetragonal phase has been reported to have the highest dielectric consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c0d0545a1a8062d3266359d0b8fca6
https://doi.org/10.1557/proc-0996-h03-01
https://doi.org/10.1557/proc-0996-h03-01
Autor:
M. D. Rossell, B. Pelissier, B. Hollander, G. Van Tendeloo, Catherine Dubourdieu, Nevine Rochat, Erwan Rauwel, F. Ducroquet
Publikováno v:
Applied physics letters 89, 012902 (2006). doi:10.1063/1.2216102
Applied physics letters
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2006, 89, pp.012902
Applied Physics Letters, 2006, 89, pp.012902
Applied physics letters
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2006, 89, pp.012902
Applied Physics Letters, 2006, 89, pp.012902
Addition of yttrium in HfO(2) thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO(2) is stabilized for 6.5 at. %. The permittivity is max
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::292be49e5600e8b2d298efd7ef9e43b7
https://juser.fz-juelich.de/record/53191
https://juser.fz-juelich.de/record/53191
