Zobrazeno 1 - 6 of 6 pro vyhledávání: '"Nevill F. Mott"'
1
Hopping conduction and the Coulomb gap; applications to Fe3O4, Ti4O7 and impurity conduction in Si:P
Autor: Nevill F. Mott
Publikováno v: Festkörperprobleme 19 ISBN: 9783528080259
Proceses in which electrons move by hopping from a full to an empty localized site in a degenerate electron gas are considered. One example is impurity conduction in doped and compensated silicon (e.g. Si:P). For the conductivity a variation as A exp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d09e3f834c736d5327a431f91f87eafb
https://doi.org/10.1007/bfb0108335
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2
The Variable Range Hopping Induced by Electron Spin Resonance in n-Type Silicon and Germanium
Autor: Hiroshi Kamimura, Nevill F. Mott
Publikováno v: Journal of the Physical Society of Japan. 40:1351-1358
The esr-induced decrease in the resistance of doped silicon and germanium for concentrations in the intermediate region is discussed. The model put forward by Morigaki and co-workers, that the effect is due to hot electrons at a mobility edge, is sho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1b39be743961a904ab8087bd31aae61
https://doi.org/10.1143/jpsj.40.1351
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5
Defect physics and chemistry: some problems awaiting a solution
Autor: Nevill F. Mott
Publikováno v: Journal of the Chemical Society, Faraday Transactions 2. 85:517
This paper reviews two important problems in the field of defect physics and chemistry, for which solutions are needed. The first refers to amorphous silicon and relates to the properties of ‘dangling bonds’. The second is the anodic oxidation of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::361aa51a5d1d059815806fe9543db974
https://doi.org/10.1039/f29898500517
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