Zobrazeno 1 - 1
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pro vyhledávání: '"Netzahualcoyotl Carlos-R"'
Autor:
Michael Kendall, Miguel Castro-L, Francisco J. De la Hidalga-W, W. Calleja-A, A. Torres-J, Roberto Murphy-A, Don L. Kendall, Ramiro Rodríguez-M, Ignacio Juárez-R, C. Zuniga-I, Elizabeth Meza Prieto, Netzahualcoyotl Carlos-R, Mauro Landa-V
Publikováno v:
ECS Transactions. 13:337-344
A nanowire (NW) device in parallel with a normal nMOSFET is fabricated with a poly-Si planar CMOS process on (5 5 12)Si. With a unit cell of 5.35 nm, this plane has the largest stable atomically flat Si surface. When output current Isd flows from sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9a74144fe8ae9decfac119122d871ce
https://doi.org/10.1149/1.2911515
https://doi.org/10.1149/1.2911515
