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pro vyhledávání: '"Nethaji Dharmarasu"'
Akademický článek
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Publikováno v:
IEEE Sensors Journal. 22:18306-18312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3766fb68a5e0ea8f3ebbb86273fb43c
https://doi.org/10.1109/jsen.2022.3201028
https://doi.org/10.1109/jsen.2022.3201028
Autor:
Akhil Ranjan, Ravikiran Lingaparthi, Lili Huo, Casimir Chan, Nethaji Dharmarasu, K. Radhakrishnan
Publikováno v:
2022 IEEE 24th Electronics Packaging Technology Conference (EPTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f1484394a33382604f0322bec41df3
https://doi.org/10.1109/eptc56328.2022.10013280
https://doi.org/10.1109/eptc56328.2022.10013280
Publikováno v:
SSRN Electronic Journal.
The surface morphology evolution of N-polar GaN with growth time was investigated and compared with Ga-polar GaN. N-polar GaN directly grown on SiC substrates was found to have slower 3D-to-2D growth transformation and less coalescence than the Ga-po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a95d16c54b975a9d2f71916fd49115c
https://doi.org/10.2139/ssrn.4238303
https://doi.org/10.2139/ssrn.4238303
Publikováno v:
Journal of Physics D: Applied Physics. 55:095110
The effects of Si doping well beyond the Mott transition limit on the structural, electrical, and optical properties of plasma assisted molecular beam epitaxy grown GaN layers were studied. Si doping up to a doping density of 20 cm−3 resulted in sm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8afbd519aa10adf1966dcd7f7cb0feb
https://doi.org/10.1088/1361-6463/ac3457
https://doi.org/10.1088/1361-6463/ac3457
Autor:
Nethaji Dharmarasu, Zilong Wang, Tng Lihuang, Kian Siong Ang, M. Agrawal, Annalisa Bruno, L. Ravikiran, Cesare Soci, K. Radhakrishnan
Publikováno v:
IEEE Sensors Journal. 17:72-77
For the development of GaN-based ultraviolet (UV) photodetectors, a simple epilayer structure consisting of GaN (600 nm)/AlN (200 nm) was grown on 100-mm Si substrate using ammonia-molecular beam epitaxy growth technique. The epilayers were crack-fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb34b7658e078819eb4ecaf12e944f56
https://doi.org/10.1109/jsen.2016.2622279
https://doi.org/10.1109/jsen.2016.2622279
Publikováno v:
2019 IEEE 9th International Nanoelectronics Conferences (INEC).
We report on Pt/AlGaN/GaN HEMT based ammonia (NH 3 ) gas sensor for low concentration (50–10 ppm) sensing over the temperature range of 30–275 °C. The current decreased when the sensor was exposed to different concentrations of NH 3 at 30 °C wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c07081a3a51341af5dead98512695a6
https://doi.org/10.1109/inec.2019.8853860
https://doi.org/10.1109/inec.2019.8853860
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
The stress of AlN buffer in AlN/GaN/AlN quantum well for double heterojunction high electron mobility transistor (DH-HEMT) heterostructure on SiC was optimized by varying the III/V ratio using PA-MBE. A relaxed AlN buffer enables the growth of strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a84ede32cb5c7fbf4a993b70dd1613
https://doi.org/10.1109/edtm.2019.8731040
https://doi.org/10.1109/edtm.2019.8731040
Autor:
Seah Tian Long Alex, M. Agrawal, Giri Sadasivam Karthikeyan, K. Radhakrishnan, Nethaji Dharmarasu
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
AlGaN/GaN HEMT epistructures were grown on SI-SiC using different doping concentrations of carbon in GaN buffer layer to study the effects of carbon on various device parameters. The carbon doping was tuned by adjusting different growth parameters, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b5ce281ba7605a36327355152855db
https://doi.org/10.1109/edtm.2019.8731173
https://doi.org/10.1109/edtm.2019.8731173
The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7903014a349845b96ac9a248130ec650
https://hdl.handle.net/10356/143634
https://hdl.handle.net/10356/143634
