Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Nestor A. Bojarczuk"'
Publikováno v:
Thin Solid Films. 556:9-12
Using thermal co-evaporation we have prepared epitaxial Cu 2 ZnSnS 4 (CZTS) films on Si(001) substrates. A substrate temperature as high as 370 °C and proper substrate cleaning (HF-dip followed by thermal desorption of surface hydrogens) are found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84fe6af04346a061d9cdbfba0f9c6d4e
https://doi.org/10.1016/j.tsf.2013.12.046
https://doi.org/10.1016/j.tsf.2013.12.046
Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:72-76
Using vacuum process, we fabricated Cu2ZnSnS4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory. This is the highest efficiency reported for pure sulfide Cu2ZnSnS4 prepared by any method. Consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd9b351f0a85b6003fb68234deff6e1
https://doi.org/10.1002/pip.1174
https://doi.org/10.1002/pip.1174
Publikováno v:
ECS Transactions. 28:191-199
The electrical and microstructural characteristics of (TbxSc1-x)2O3/Si dielectric films (x=0, 0.5, 1) prepared by the molecular beam deposition technique on silicon substrates were investigated as a function of composition. X-ray photoelectron spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::779c2c3c6e75c59e1070dc3accf9c707
https://doi.org/10.1149/1.3375601
https://doi.org/10.1149/1.3375601
Publikováno v:
Philosophical Magazine. 90:1123-1139
The Molecular beam synthesis and characterization are reported for Y2O3 thin films grown on Al2O3 (0001) substrate. The Y2O3 layer was highly oriented in the [111] direction with predominant orientation relations (111) Y2O3 ‖ (0001) Al2O3 and [110]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a20fdbb0968d39962f19f4d482483a3
https://doi.org/10.1080/14786430903292415
https://doi.org/10.1080/14786430903292415
Autor:
Vamsi Paruchuri, Nestor A. Bojarczuk, Eduard A. Cartier, Barry Linder, Stephen L. Brown, Yanfeng Wang, Tze-Chiang Chen, Matthew Copel, Vijay Narayanan, Supratik Guha
Publikováno v:
Microelectronic Engineering. 84:1853-1856
Continued miniaturization of the different physical elements of a Si MOSFET required in order to attain higher transistor performance and greater economies of scale have spurred the need for significant materials innovations. This is most apparent in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662d4c3d1d38d579e1ebe367d714778e
https://doi.org/10.1016/j.mee.2007.04.079
https://doi.org/10.1016/j.mee.2007.04.079
Autor:
Vijay Narayanan, Wang Yingan, Vamsi Paruchuri, Nestor A. Bojarczuk, Stephen L. Brown, Supratik Guha, Eduard A. Cartier, Barry Linder
Publikováno v:
ECS Transactions. 6:287-294
The criterion for a suitable high-K dielectric/metal gate stack for replacing SiON/Poly-Si stacks in conventional CMOS devices are i) Equivalent oxide thickness (EOT) of {less than or equal to} 1.1 nm, ii) Electron and hole mobilities that are compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7278c26254490bda20ce8a785de384d5
https://doi.org/10.1149/1.2727412
https://doi.org/10.1149/1.2727412
Publikováno v:
ECS Transactions. 1:363-370
We have studied tungsten gated hafnium oxide silicon MOSFETs and show that dissolved oxygen in the tungsten metal can diffuse to the hafnium oxide silicon interface, resulting in interfacial oxide growth and higher mobilities. These results indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2266a4c9946bf49106f742a3779cf6c
https://doi.org/10.1149/1.2209285
https://doi.org/10.1149/1.2209285
Autor:
Lars-Ake Ragnarsson, Nestor A. Bojarczuk, Supratik Guha, Matthew Copel, Joseph M. Karasinski, Evgeni Gusev
Publikováno v:
Journal of Applied Physics. 93:3912-3919
We report on the physical and electrical properties of AlN as grown by reactive-atomic-beam deposition under various growth and anneal conditions. The physical characterization shows that AlN grown on hydrogen terminated (HF-last) Si has a thin layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4cafc89b88c6339aaa569424db523ff
https://doi.org/10.1063/1.1555687
https://doi.org/10.1063/1.1555687
Publikováno v:
Journal of Applied Physics. 93:251-258
We have studied the effect of growth temperature on the growth mode and defect density of (LaxY1−x)2O3/Si(111) and Si(111)/(LaxY1−x)2O3/Si(111) heterostructures by transmission electron microscopy. We have also investigated the epitaxial relation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23f3d829eb0e604313d1d59b7fdb49a3
https://doi.org/10.1063/1.1527715
https://doi.org/10.1063/1.1527715
Autor:
Nestor A. Bojarczuk, D. Y. Ryu, D. J. Kim, Supratik Guha, Joseph M. Karasinski, S. H. Lee, J. H. Lee
Publikováno v:
Journal of Applied Physics. 88:2564-2569
A series of GaN:Mg structures were grown in molecular beam epitaxy, using either one or two rf nitrogen sources, and in metalorganic chemical vapor deposition systems with varying Mg flux. Acceptor energies were measured using the Hall effect and adm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4596a075a2b661bba86d2fde91f95e1
https://doi.org/10.1063/1.1286925
https://doi.org/10.1063/1.1286925