Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Nerija ŽURAUSKIENĖ"'
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1635 (2024)
The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the m
Externí odkaz:
https://doaj.org/article/8ff2affd2bb44827b4772519407f7a60
Autor:
Voitech Stankevič, Kamilė Jonynaitė, Ahmed Taha, Skirmantas Keršulis, Aldas Dervinis, Sebastjanas Kurčevskis, Sonata Tolvaišienė, Arūnas Stirkė, Nerija Žurauskienė
Publikováno v:
Applied Sciences, Vol 14, Iss 9, p 3886 (2024)
This study introduces an innovative two-range, 12-stage Marx pulse generator employing thyristor switches designed specifically for the electroporation of biological cells. The generator consists of two module capacitors of different capacitances (1
Externí odkaz:
https://doaj.org/article/5cad41db275046549f8533a8ba79cb92
Autor:
Šarunas Meškinis, Rimantas Gudaitis, Andrius Vasiliauskas, Asta Guobienė, Šarūnas Jankauskas, Voitech Stankevič, Skirmantas Keršulis, Arūnas Stirkė, Eivydas Andriukonis, Wanessa Melo, Vilius Vertelis, Nerija Žurauskienė
Publikováno v:
Nanomaterials, Vol 13, Iss 16, p 2373 (2023)
Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (
Externí odkaz:
https://doaj.org/article/15b5b1aec8264f6691210faa3b8fed7d
Publikováno v:
Sensors, Vol 23, Iss 12, p 5365 (2023)
The results of magnetoresistance (MR) and resistance relaxation of nanostructured La1−xSrxMnyO3 (LSMO) films with different film thicknesses (60–480 nm) grown on Si/SiO2 substrate by the pulsed-injection MOCVD technique are presented and compared
Externí odkaz:
https://doaj.org/article/8fc11f502ed24d9bb171e96dff462823
Autor:
Nerija Žurauskienė
Publikováno v:
Sensors, Vol 23, Iss 6, p 2939 (2023)
Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements
Externí odkaz:
https://doaj.org/article/a69a318817554807a3787c7b885fb811
Autor:
Voitech Stankevič, Skirmantas Keršulis, Justas Dilys, Vytautas Bleizgys, Mindaugas Viliūnas, Vilius Vertelis, Andrius Maneikis, Vakaris Rudokas, Valentina Plaušinaitienė, Nerija Žurauskienė
Publikováno v:
Sensors, Vol 23, Iss 3, p 1435 (2023)
A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganit
Externí odkaz:
https://doaj.org/article/5f5092be813a4a6e8a672e5dd42356e3
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 220-222 (2014)
The electroresistance (ER) effect in polycrystalline films of La0.83Sr0.17MnO3 and La0.7Ca0.3MnO3 was investigated in the temperature range of (5 – 290) K using high power sub-nanosecond rise time electrical pulses with amplitude up to 1 kV. It was
Externí odkaz:
https://doaj.org/article/712bf9615f48440cb902a810afdf86fb
Publikováno v:
Sensors; Volume 23; Issue 12; Pages: 5365
The results of magnetoresistance (MR) and resistance relaxation of nanostructured La1−xSrxMnyO3 (LSMO) films with different film thicknesses (60–480 nm) grown on Si/SiO2 substrate by the pulsed-injection MOCVD technique are presented and compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::685f6c2b61b3d665be1df8a4bbc3afe5
Autor:
Dainius Pavilonis, Nerija Žurauskienė
Publikováno v:
Lithuanian Journal of Physics. 54:37-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf742b81221d25c77eb6ffeffd570bb8
https://doi.org/10.3952/physics.v54i1.2843
https://doi.org/10.3952/physics.v54i1.2843
Autor:
Nerija Žurauskienė, G. Janssen, PM Paul Koenraad, Etienne Goovaerts, Vitalii Yu. Ivanov, Marek Godlewski
Publikováno v:
SPIE Proceedings.
Shallowly formed InAs quantum dots (QDs) embedded in GaAs are investigated by Optically Detected Microwave Resonance (ODMR) technique. The low temperature (1.6 K) photoluminescence (PL) spectrum reveals a two-peak structure which is attributed to two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7aa34591aa5e1dbb5fba2ff56df7f08
https://doi.org/10.1117/12.726363
https://doi.org/10.1117/12.726363