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pro vyhledávání: '"Nereus Agbo"'
Publikováno v:
Energies, Vol 14, Iss 20, p 6834 (2021)
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and thresho
Externí odkaz:
https://doaj.org/article/434b566e05ac4848bfad6ec9fd93f08b
Autor:
Sunday Nereus Agbo, Erfan Bashar, Ruizhu Wu, Simon Mendy, Jose Ortiz Gonzalez, Olayiwola Alatise
Using experimental measurements and finite element simulations, this paper investigates the failure mode of SiC Cascode JFETs under short circuit (SC) conditions. Unlike SiC MOSFETs, where failure results in a shorted gate-source terminal (resulting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97b8a54470106a7ba85adf03a88d1d2
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
Publikováno v:
Energies, Vol 14, Iss 6834, p 6834 (2021)
Wu, R, Mendy, S, Agbo, N, Gonzalez, J O, Jahdi, S & Alatise, O 2021, ' Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions ', Energies, vol. 14, no. 20, 6834 . https://doi.org/10.3390/en14206834
Energies; Volume 14; Issue 20; Pages: 6834
Wu, R, Mendy, S, Agbo, N, Gonzalez, J O, Jahdi, S & Alatise, O 2021, ' Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions ', Energies, vol. 14, no. 20, 6834 . https://doi.org/10.3390/en14206834
Energies; Volume 14; Issue 20; Pages: 6834
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and thresho