Zobrazeno 1 - 1
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pro vyhledávání: '"Nepomnyashchiy Aleksandr"'
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 15, Iss 3.1 (2022)
The formation of a porous silicon (por-Si) layer in a thin p-type layer epitaxially grown on n-type silicon, at two anodizing current densities and different anodizing times is studied and a comparison is made of transverse cleavages, surface morphol
Externí odkaz:
https://doaj.org/article/99cb204ed9974610871d380a6660c474
