Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Neogi, Sanghamitra"'
We propose a physics-aware generative adversarial network model, FluxGAN, capable of simultaneously generating high-quality images of large microstructures and description of their thermal properties. During the training phase, the model learns about
Externí odkaz:
http://arxiv.org/abs/2310.04622
Publikováno v:
J. Appl. Phys. 14 March 2024; 135 (10): 104401
Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace
Externí odkaz:
http://arxiv.org/abs/2308.06896
Autor:
Pimachev, Artem K, Neogi, Sanghamitra
The atomic environments of semiconductor heterostructures can be highly varied as various structural imperfections, lattice mismatch and non-uniform strain environments are generally present. The computational costs of first-principles modeling techn
Externí odkaz:
http://arxiv.org/abs/2302.00261
Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of
Externí odkaz:
http://arxiv.org/abs/2111.12831
Publikováno v:
Journal of Applied Physics; 3/14/2024, Vol. 135 Issue 10, p1-18, 18p
Autor:
Pimachev, Artem K., Neogi, Sanghamitra
Publikováno v:
npj Computational Materials 7, 93 (2021)
First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to model heterostructures incorporating variability due to fabrication processes. Machine-learning (ML)
Externí odkaz:
http://arxiv.org/abs/2011.08426
Autor:
Settipalli, Manoj, Neogi, Sanghamitra
Publikováno v:
Journal of Electronic Materials volume 49, pages 4431-4442(2020)
We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based
Externí odkaz:
http://arxiv.org/abs/1911.08013
Autor:
Neogi, Sanghamitra, Donadio, Davide
Publikováno v:
Phys. Rev. Applied 14, 024004 (2020)
Anisotropic phonon transport along different lattice directions of two-dimensional (2D) materials has been observed, however, the effect decreases with increasing the thickness beyond a few atomic layers. Here we establish a novel mechanism to induce
Externí odkaz:
http://arxiv.org/abs/1910.04965
Publikováno v:
Journal of Applied Physics 129, 025301 (2021)
In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlatt
Externí odkaz:
http://arxiv.org/abs/1907.03461
Publikováno v:
Phys. Rev. B 99, 014207 (2019)
Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon lattice was
Externí odkaz:
http://arxiv.org/abs/1806.00217