Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Neo Soh Ping"'
Autor:
Loh Sock Khim, Ang Ghim Boon, Ng Hui Peng, Zhao Si Ping, Neo Soh Ping, Chen Changqing, Ng Peng Tiong, Yip Kim Hong, Angela Teo
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a low yield case with a specific failing pattern in the wafers and related to a systematic front-end defect in DNWELL from a specific location and structure in the device was discussed. This paper also illustrates and put emphasis on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ccdc40c621adbba6375bcd4b188d38
https://doi.org/10.1109/ipfa.2013.6599149
https://doi.org/10.1109/ipfa.2013.6599149
Autor:
Neo Soh Ping, Lee Mern Tat, Chen Changqing, Ang Ghim Boon, Ng Hui Peng, Indahwan Jony, Magdeliza G
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, a zero yield case relating to a systematic defect in N+ poly/N-well varactor (voltage controlled capacitor) on the RF analog circuitry will be studied. The systematic problem solving process based on the application of a variety of FA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f47e9584ed97928a20fa0e681d1a821
https://doi.org/10.31399/asm.cp.istfa2012p0370
https://doi.org/10.31399/asm.cp.istfa2012p0370
Autor:
Indahwan Jony, Ang Ghim Boon, David Zhu, Alfred Quah, Magdeliza Magdeliza, Chen Changqing, Neo Soh Ping, Lee Mern Tat
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, a low yield case relating to a systematic array of failures in a ring pattern due to ADC_PLL failures on low yielding wafers will be studied. A systematic problem solving process based on the application of a variety of FA techniques s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aa3169dd923496acdfacf08a8e31876
https://doi.org/10.31399/asm.cp.istfa2010p0058
https://doi.org/10.31399/asm.cp.istfa2010p0058
Publikováno v:
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
In this paper, a new FA method was proposed and successfully used in the OTP (one time programmable) memory disturbance failure. The traditional FA method PVC (positive voltage contrast) is employed to detect the failed location, but it failed to fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a635f230ba8ff30b839163e69f28e620
https://doi.org/10.1109/ipfa.2010.5532005
https://doi.org/10.1109/ipfa.2010.5532005
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
The electromigration (EM) of a W-plug contact to silicon has been investigated by high resolution resistance measurement (HRRM). Step-like resistance degradation curves was observed in EM tests. Scanning electron microscope (SEM) observation shows th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79430a933eae1f2059887366eb0cbcbb
https://doi.org/10.1109/iitc.1999.787073
https://doi.org/10.1109/iitc.1999.787073
Autor:
Neo Soh Ping, Luo Chang Ping
Publikováno v:
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548).
Normally, it is difficult to isolate and identify the root cause for sort failures, especially for functional failures. This problem is worst for the wafer foundry because of the limited information on the product from customer. Sort test failures ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90578bb5222aa3f41545c3ac117c2b3c
https://doi.org/10.1109/ipfa.2001.941487
https://doi.org/10.1109/ipfa.2001.941487
Publikováno v:
Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).
The impact of test structure design on the electromigration (EM) lifetime of metal interconnects has been investigated using high resolution resistance measurement (HRRM). The metal stripe in the test structure is of bamboo structure and multiple via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa9c8089a5ee70247d2291439c34b6e
https://doi.org/10.1109/ipfa.1999.791301
https://doi.org/10.1109/ipfa.1999.791301
Autor:
Ang, Ghim Boon, Chen Changqing, Zhao Si Ping, Neo Soh Ping, Yip Kim Hong, Loh Sock Khim, Ng Hui Peng, Teo, Angela, Ng Peng Tiong
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2013, p177-181, 5p
Publikováno v:
2010 17th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA); 2010, p1-4, 4p
Autor:
Luo Chang Ping, Neo Soh Ping
Publikováno v:
Proceedings of the 2001 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548); 2001, p206-209, 4p