Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Neng-Tai Shih"'
Autor:
B. Huang, Neng-Tai Shih, Chung-Yuan Lee, Yi-Jung Chen, Sheng-Tsung Chen, Chia Chuan Hsu, Pei-Ing Lee, Chao-Sung Lai, G. Chuang, Shian-Jyh Lin
Publikováno v:
IEEE Transactions on Electron Devices. 56:1608-1617
In this paper, we successfully demonstrated gate-induced drain leakage (GIDL) improvements by millisecond flash anneal (MFLA) on a DRAM product. Fundamental studies on blanket wafers and the device characteristics of product wafers showed positive re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d750f18bb03ac9050b690101d15895cb
https://doi.org/10.1109/ted.2009.2022689
https://doi.org/10.1109/ted.2009.2022689
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
In terms of defect generation and redistribution, the electrical forming process and filamentary conduction lead conventional RRAM cells to low yield, high operation current, and large operation variations [1–3]. Recently, emerging RRAM cells based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::396669443898442436d59b1fb54ef178
https://doi.org/10.1109/vtsa.2011.5872234
https://doi.org/10.1109/vtsa.2011.5872234
Autor:
Pei-Ing Lee, B. Huang, Yi-Jung Chen, Chung-Yuan Lee, Shian-Jyh Lin, Neng-Tai Shih, Sheng-Tsung Chen, Chao-Sung Lai
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We successfully demonstrate the millisecond flash anneal (MFLA) on a matured DRAM product. The GIDL improvements for array NMOS, periphery N and P MOS are 14.5%,15%, and 39% respectively. The mechanisms of GIDL impact at different process stages have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a9b008254746a9ec319f3e7332915e
https://doi.org/10.1109/vtsa.2008.4530817
https://doi.org/10.1109/vtsa.2008.4530817
Autor:
Shian-Jyh Lin, Neng-Tai Shih, Brady Huang, Sheng-Tsung Chen, Chung-Yuan Lee, Ruey-Dar Chang, Pei-Ing Lee, Graham Chuang, Yi-Jung Chan, Wei Chih. Wang, Chao-Sung Lai
Publikováno v:
Journal of The Electrochemical Society. 158:H363
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b0e4c4b023984e03aeee8578c0846f4
https://doi.org/10.1149/1.3547701
https://doi.org/10.1149/1.3547701
Autor:
Chun-I Hsieh, Jui-Hsiu Jao, Wei-Chia Chen, Graham Chuang, Mon-Yao Chen, Chang-Rong Wu, Neng-Tai Shih
Publikováno v:
ECS Meeting Abstracts. :1378-1378
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c48c0790942f9cbc542d6d6c19e8cb0
https://doi.org/10.1149/ma2010-02/19/1378
https://doi.org/10.1149/ma2010-02/19/1378
Autor:
Shian-Jyh Lin, Chao-Sung Lai, Yi-Jung Chen, Sheng-Tsung Chen, Chia Chuan Hsu, Huang, Brady, Chuang, Graham, Neng-Tai Shih, Chung-Yuan Lee, Pei-Ing Lee
Publikováno v:
IEEE Transactions on Electron Devices; Aug2009, Vol. 56 Issue 8, p1608-1617, 10p, 3 Black and White Photographs, 1 Diagram, 2 Charts, 5 Graphs
Publikováno v:
2011 International Symposium on VLSI Technology, Systems & Applications (VLSI-TSA); 2011, p1-2, 2p
Autor:
Shian-Jyh Lin, Chao-Sung Lai, Sheng-Tsung Chen, Yi-Jung Chen, Huang, B., Neng-Tai Shih, Chung-Yuan Lee, Pei-Ing Lee
Publikováno v:
2008 International Symposium on VLSI Technology, Systems & Applications (VLSI-TSA); 2008, p99-100, 2p