Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Neng-Jie You"'
Autor:
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh
Publikováno v:
Micromachines, Vol 14, Iss 3, p 576 (2023)
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact
Externí odkaz:
https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef
Autor:
De-Ren Yang, Neng-Jie You, Jia-Min Shieh, Wen-Chieh Ho, Hao-Chung Kuo, Sung-Wen Huang Chen, Jerry Tzou
Publikováno v:
IEEE Transactions on Nanotechnology. 20:489-494
In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of 1.98 mΩ-cm2. The GaN epi-layer was etched to the multi-fins-structure with optimized bevel angle. The fins structure enables to improve