Zobrazeno 1 - 10
of 256
pro vyhledávání: '"Nenashev, A. V."'
The space- and temperature-dependent electron distribution $n(r,T)$ determines optoelectronic properties of disordered semiconductors. It is a challenging task to get access to $n(r,T)$ in random potentials, avoiding the time-consuming numerical solu
Externí odkaz:
http://arxiv.org/abs/2312.13022
Autor:
Nenashev, A. V., Baranovskii, S. D.
We have generalized the results of the previous work [arXiv:2302.12209] to the case of three-dimensional (3D) spacetime with two spatial and one temporal coordinates. We have found that the flat Minkowski 3D spacetime is "well-stitched", which means
Externí odkaz:
http://arxiv.org/abs/2312.03487
Here we show that the concepts behind such terms as entanglement, qubits, quantum gates, quantum error corrections, unitary time evolution etc., which are usually ascribed to quantum systems, can be adequately realized on a set of coupled classical p
Externí odkaz:
http://arxiv.org/abs/2312.00631
An appropriately parameterized compact analytical equation (APAE) is suggested to account for charge carrier mobility in organic disordered semiconductors (ODSs). This equation correctly reproduces the effects of temperature $T$, carrier concentratio
Externí odkaz:
http://arxiv.org/abs/2311.05406
There are several ways to derive Einstein's celebrated formula for the energy of a massive particle at rest, $E=mc^2$. Noether's theorem applied to the relativistic Lagrange function provides an unambiguous and straightforward access to energy and mo
Externí odkaz:
http://arxiv.org/abs/2308.02612
Autor:
Nenashev, A. V., Baranovskii, S. D.
We demonstrate how one can distinguish a curved 4-dimensional spacetime from a flat one, when it is possible, relying only on the causality relations between events. It is known that it is possible only for spacetimes that are not conformally flat. W
Externí odkaz:
http://arxiv.org/abs/2302.12209
The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of the opto-electronic properties of disordered semiconductors. We present two powerful techniques to access $n(\mathbf r,T)$ wit
Externí odkaz:
http://arxiv.org/abs/2212.00643
The current burst in research activities on disordered semiconductors calls for the development of appropriate theoretical tools that reveal the features of electron states in random potentials while avoiding the time-consuming numerical solution of
Externí odkaz:
http://arxiv.org/abs/2212.00633
Autor:
Nenashev, Grigorii V., Aleshin, Andrey N., Ryabko, Andrey A., Shcherbakov, Igor P., Moshnikov, Vyacheslav A., Muratova, Ekaterina N., Kondratev, Valeriy M., Vrublevsky, Igor A.
Publikováno v:
In Solid State Communications 15 September 2024 388
Autor:
Baranovskii, S. D., Höhbusch, P., Nenashev, A. V., Dvurechenskii, A. V., Gerhard, M., Koch, M., Hertel, D., Meerholz, K., Gebhard, F.
Studying optoelectronic properties in FAPb$_{1-x}$Sn$_x$I$_3$ perovskites as a function of the lead:tin content, Parrott et al. observed the broadest luminescence linewidth and the largest luminescence Stokes shift in mixed compositions with Sn $ < 2
Externí odkaz:
http://arxiv.org/abs/2201.13401